PH3/H2 plasma  passivation of metal-organic chemical vapor deposition grown GaAs on Si

JAP 88_3689

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lat lon distance

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JAP 88_3689.pdf

https://nitech.repo.nii.ac.jp/record/4881/files/JAP 88_3689.pdf

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JAP 88_3689.pdf (100.5 kB) sha256 34e27460fee76332829836cbf2e30fb0a1c2679437b1e59bac219bf95e8d8bcb	Copyright (2000) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.The following article appeared in Journal of Applied Physics, 88(6), pp.3689- 3694 ; 2000 and may be found at http://link.aip.org/link/?jap/88/3689

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