@article{oai:nitech.repo.nii.ac.jp:00004884,
 author = {Zhao, G. Y. and Adachi, M. and Ishikawa, H. and Egawa, Takashi and Umeno, Masayoshi and Jimbo, Takashi},
 issue = {14},
 journal = {APPLIED PHYSICS LETTERS},
 month = {Oct},
 note = {Si delta-doped GaN has been grown by metalorganic chemical-vapor deposition. A very high peak density and narrow full width at half maximum (FWHM) of the carrier profile are obtained. It is found that the peak carrier density of Si delta doping increases with the doping time and SiH4 flow rate, while the FWHM of the carrier profile decreases with both increasing doping time and SiH4 flow rate. Some saturation in the carrier density has also been observed for relatively longer doping time. Except for a broadened carrier distribution in GaN induced by Si diffusion due to high growth temperature, the Si delta-doping properties in GaN are found to be similar to those of GaAs., application/pdf},
 pages = {2195--2197},
 title = {Growth of Si delta-doped GaN by metalorganic chemical-vapor deposition},
 volume = {77},
 year = {2000}
}