{"created":"2023-05-15T12:35:49.058336+00:00","id":4884,"links":{},"metadata":{"_buckets":{"deposit":"2f8f721b-7b25-449a-a2b9-31a5798415bf"},"_deposit":{"created_by":3,"id":"4884","owners":[3],"pid":{"revision_id":0,"type":"depid","value":"4884"},"status":"published"},"_oai":{"id":"oai:nitech.repo.nii.ac.jp:00004884","sets":["31"]},"author_link":["522","4028","15951","4015","14056","13619"],"item_10001_biblio_info_28":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2000-10-02","bibliographicIssueDateType":"Issued"},"bibliographicIssueNumber":"14","bibliographicPageEnd":"2197","bibliographicPageStart":"2195","bibliographicVolumeNumber":"77","bibliographic_titles":[{"bibliographic_title":"APPLIED PHYSICS LETTERS"}]}]},"item_10001_description_36":{"attribute_name":"内容記述","attribute_value_mlt":[{"subitem_description":"Si delta-doped GaN has been grown by metalorganic chemical-vapor deposition. A very high peak density and narrow full width at half maximum (FWHM) of the carrier profile are obtained. It is found that the peak carrier density of Si delta doping increases with the doping time and SiH4 flow rate, while the FWHM of the carrier profile decreases with both increasing doping time and SiH4 flow rate. Some saturation in the carrier density has also been observed for relatively longer doping time. Except for a broadened carrier distribution in GaN induced by Si diffusion due to high growth temperature, the Si delta-doping properties in GaN are found to be similar to those of GaAs.","subitem_description_type":"Other"}]},"item_10001_description_38":{"attribute_name":"フォーマット","attribute_value_mlt":[{"subitem_description":"application/pdf","subitem_description_type":"Other"}]},"item_10001_full_name_27":{"attribute_name":"著者別名","attribute_value_mlt":[{"nameIdentifiers":[{},{}],"names":[{"name":"江川, 孝志"}]},{"nameIdentifiers":[{}],"names":[{"name":"梅野, 正義"}]},{"nameIdentifiers":[{}],"names":[{"name":"神保, 孝志"}]}]},"item_10001_publisher_29":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"American Institute of Physics"}]},"item_10001_source_id_30":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"00036951","subitem_source_identifier_type":"ISSN"}]},"item_10001_source_id_32":{"attribute_name":"書誌レコードID（NCID）","attribute_value_mlt":[{"subitem_source_identifier":"AA00543432","subitem_source_identifier_type":"NCID"}]},"item_10001_version_type_33":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_970fb48d4fbd8a85","subitem_version_type":"VoR"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Zhao, G. Y.","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Adachi, M.","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Ishikawa, H.","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Egawa, Takashi","creatorNameLang":"en"}],"nameIdentifiers":[{},{}]},{"creatorNames":[{"creatorName":"Umeno, Masayoshi","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Jimbo, Takashi","creatorNameLang":"en"}],"nameIdentifiers":[{}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2017-01-25"}],"displaytype":"detail","filename":"APL 77_2195.pdf","filesize":[{"value":"46.1 kB"}],"format":"application/pdf","license_note":"Copyright (2000) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.The following article appeared in Applied physics letters, 77(14),pp.2195 -2197; 2000 and may be found at http://link.aip.org/link/?apl/77/2195","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"本文_fulltext","url":"https://nitech.repo.nii.ac.jp/record/4884/files/APL 77_2195.pdf"},"version_id":"8631e759-4aae-4e5e-a727-3f3fd8b1f924"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"Growth of Si delta-doped GaN by metalorganic chemical-vapor deposition","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Growth of Si delta-doped GaN by metalorganic chemical-vapor deposition","subitem_title_language":"en"}]},"item_type_id":"10001","owner":"3","path":["31"],"pubdate":{"attribute_name":"公開日","attribute_value":"2012-11-06"},"publish_date":"2012-11-06","publish_status":"0","recid":"4884","relation_version_is_last":true,"title":["Growth of Si delta-doped GaN by metalorganic chemical-vapor deposition"],"weko_creator_id":"3","weko_shared_id":3},"updated":"2023-05-15T14:40:48.380904+00:00"}