@article{oai:nitech.repo.nii.ac.jp:00004899,
 author = {Soga, Tetsuo and Jimbo, Takashi and Arokiaraj, J. and Umeno, Masayoshi},
 issue = {24},
 journal = {APPLIED PHYSICS LETTERS},
 month = {Dec},
 note = {A stress-released GaAs layer was grown on GaAs bonded to Si substrate with the combination of epitaxial lift-off technique and regrowth by metalorganic chemical vapor deposition. The GaAs thin film was bonded to Si substrate using SeS2 and another GaAs layer was regrown. The photoluminescence peak wavelength and the slope of the time resolved photoluminescence decay of GaAs/Si are almost the same as those of GaAs grown on GaAs substrate., application/pdf},
 pages = {3947--3949},
 title = {Growth of stress-released GaAs on GaAs/Si structure by metalorganic chemical vapor deposition},
 volume = {77},
 year = {2000}
}