{"created":"2023-05-15T12:35:49.690414+00:00","id":4899,"links":{},"metadata":{"_buckets":{"deposit":"956d0c84-acf4-44aa-af59-a5e136b965dd"},"_deposit":{"created_by":3,"id":"4899","owners":[3],"pid":{"revision_id":0,"type":"depid","value":"4899"},"status":"published"},"_oai":{"id":"oai:nitech.repo.nii.ac.jp:00004899","sets":["31"]},"author_link":["3257","4028","15307","4015"],"item_10001_biblio_info_28":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2000-12-11","bibliographicIssueDateType":"Issued"},"bibliographicIssueNumber":"24","bibliographicPageEnd":"3949","bibliographicPageStart":"3947","bibliographicVolumeNumber":"77","bibliographic_titles":[{"bibliographic_title":"APPLIED PHYSICS LETTERS"}]}]},"item_10001_description_36":{"attribute_name":"内容記述","attribute_value_mlt":[{"subitem_description":"A stress-released GaAs layer was grown on GaAs bonded to Si substrate with the combination of epitaxial lift-off technique and regrowth by metalorganic chemical vapor deposition. The GaAs thin film was bonded to Si substrate using SeS2 and another GaAs layer was regrown. The photoluminescence peak wavelength and the slope of the time resolved photoluminescence decay of GaAs/Si are almost the same as those of GaAs grown on GaAs substrate.","subitem_description_type":"Other"}]},"item_10001_description_38":{"attribute_name":"フォーマット","attribute_value_mlt":[{"subitem_description":"application/pdf","subitem_description_type":"Other"}]},"item_10001_full_name_27":{"attribute_name":"著者別名","attribute_value_mlt":[{"nameIdentifiers":[{},{}],"names":[{"name":"曾我, 哲夫"}]},{"nameIdentifiers":[{}],"names":[{"name":"神保, 孝志"}]},{"nameIdentifiers":[{}],"names":[{"name":"梅野, 正義"}]}]},"item_10001_publisher_29":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"American Institute of Physics"}]},"item_10001_source_id_30":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"00036951","subitem_source_identifier_type":"ISSN"}]},"item_10001_source_id_32":{"attribute_name":"書誌レコードID（NCID）","attribute_value_mlt":[{"subitem_source_identifier":"AA00543432","subitem_source_identifier_type":"NCID"}]},"item_10001_version_type_33":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_970fb48d4fbd8a85","subitem_version_type":"VoR"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Soga, Tetsuo","creatorNameLang":"en"}],"nameIdentifiers":[{},{}]},{"creatorNames":[{"creatorName":"Jimbo, Takashi","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Arokiaraj, J.","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Umeno, Masayoshi","creatorNameLang":"en"}],"nameIdentifiers":[{}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2017-01-25"}],"displaytype":"detail","filename":"APL 77_3947.pdf","filesize":[{"value":"44.4 kB"}],"format":"application/pdf","license_note":"Copyright (2000) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.The following article appeared in Applied physics letters, 77(24), pp.3947-3949; 2000 and may be found at http://link.aip.org/link/?apl/77/3947","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"本文_fulltext","url":"https://nitech.repo.nii.ac.jp/record/4899/files/APL 77_3947.pdf"},"version_id":"9375604b-9560-4825-98c8-618674ed4f3d"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"Growth of stress-released GaAs on GaAs/Si structure by metalorganic chemical vapor deposition","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Growth of stress-released GaAs on GaAs/Si structure by metalorganic chemical vapor deposition","subitem_title_language":"en"}]},"item_type_id":"10001","owner":"3","path":["31"],"pubdate":{"attribute_name":"公開日","attribute_value":"2012-11-06"},"publish_date":"2012-11-06","publish_status":"0","recid":"4899","relation_version_is_last":true,"title":["Growth of stress-released GaAs on GaAs/Si structure by metalorganic chemical vapor deposition"],"weko_creator_id":"3","weko_shared_id":3},"updated":"2023-05-15T14:40:10.142676+00:00"}