{"created":"2023-05-15T12:35:49.857364+00:00","id":4903,"links":{},"metadata":{"_buckets":{"deposit":"7bc13a5b-2615-47fe-a458-f853b3d67f76"},"_deposit":{"created_by":3,"id":"4903","owners":[3],"pid":{"revision_id":0,"type":"depid","value":"4903"},"status":"published"},"_oai":{"id":"oai:nitech.repo.nii.ac.jp:00004903","sets":["31"]},"author_link":["4015","3257","16053","4028"],"item_10001_biblio_info_28":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2000-12-25","bibliographicIssueDateType":"Issued"},"bibliographicIssueNumber":"26","bibliographicPageEnd":"4306","bibliographicPageStart":"4304","bibliographicVolumeNumber":"77","bibliographic_titles":[{"bibliographic_title":"APPLIED PHYSICS LETTERS"}]}]},"item_10001_description_36":{"attribute_name":"内容記述","attribute_value_mlt":[{"subitem_description":"Hard and smooth nanocrystalline diamond films are grown on mirror polished silicon substrates by biased enhanced growth (BEG) in microwave plasma chemical vapor deposition at lower temperatures. Hardness of the films varies with deposition condition and can be defined by the relative concentration of nanocrystalline diamond in the films, as measured by the Raman intensity ratio of the feature near 1150 cm-1 to the intensity of graphitic G band. The hardness of the films approaches the hardness of diamond at conditions giving maximum concentration of nanocrystalline diamond while still having a low amount of stress (1-2 GPa). A different regime of growth appears to exist in the films deposited by the BEG process that may, however, be a combination of surface and subsurface processes.","subitem_description_type":"Other"}]},"item_10001_description_38":{"attribute_name":"フォーマット","attribute_value_mlt":[{"subitem_description":"application/pdf","subitem_description_type":"Other"}]},"item_10001_full_name_27":{"attribute_name":"著者別名","attribute_value_mlt":[{"nameIdentifiers":[{}],"names":[{"name":"梅野, 正義"}]},{"nameIdentifiers":[{},{}],"names":[{"name":"曾我, 哲夫"}]},{"nameIdentifiers":[{}],"names":[{"name":"神保, 孝志"}]}]},"item_10001_publisher_29":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"American Institute of Physics"}]},"item_10001_source_id_30":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"00036951","subitem_source_identifier_type":"ISSN"}]},"item_10001_source_id_32":{"attribute_name":"書誌レコードID（NCID）","attribute_value_mlt":[{"subitem_source_identifier":"AA00543432","subitem_source_identifier_type":"NCID"}]},"item_10001_version_type_33":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_970fb48d4fbd8a85","subitem_version_type":"VoR"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Sharda, T.","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Umeno, Masayoshi","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Soga, Tetsuo","creatorNameLang":"en"}],"nameIdentifiers":[{},{}]},{"creatorNames":[{"creatorName":"Jimbo, Takashi","creatorNameLang":"en"}],"nameIdentifiers":[{}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2017-01-25"}],"displaytype":"detail","filename":"APL 77_4304.pdf","filesize":[{"value":"56.5 kB"}],"format":"application/pdf","license_note":"Copyright (2000) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.The following article appeared in Applied physics letters, 77(26), pp.4304-4306; 2000 and may be found at http://link.aip.org/link/?apl/77/4304","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"本文_fulltext","url":"https://nitech.repo.nii.ac.jp/record/4903/files/APL 77_4304.pdf"},"version_id":"884dcb6a-f4c8-4d27-84bf-534f570cd974"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"Growth  of nanocrystalline diamond films by biased enhanced microwave plasma chemical vapor deposition: A different regime of growth","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Growth  of nanocrystalline diamond films by biased enhanced microwave plasma chemical vapor deposition: A different regime of growth","subitem_title_language":"en"}]},"item_type_id":"10001","owner":"3","path":["31"],"pubdate":{"attribute_name":"公開日","attribute_value":"2012-11-06"},"publish_date":"2012-11-06","publish_status":"0","recid":"4903","relation_version_is_last":true,"title":["Growth  of nanocrystalline diamond films by biased enhanced microwave plasma chemical vapor deposition: A different regime of growth"],"weko_creator_id":"3","weko_shared_id":3},"updated":"2023-05-15T14:39:56.074245+00:00"}