@article{oai:nitech.repo.nii.ac.jp:00004911,
 author = {Krishna, K. M. and Ebisu, H. and Hagimoto, K. and Hayashi, Y. and Soga, Tetsuo and Jimbo, Takashi and Umeno, Masayoshi},
 issue = {3},
 journal = {APPLIED PHYSICS LETTERS},
 month = {Jan},
 note = {The density of electronic defect states in most forms of amorphous carbon deposited at room temperature is found so far to be very high (1018-1022 spinscm-3). In this letter, we demonstrate that the radio-frequency plasma-enhanced chemical vapor deposited hydrogenated amorphous carbon (a-C:H) thin film exhibits the lowest spin density of the order of 1016cm-3, investigated by using electron spin resonance (ESR) spectroscopy, a very promising reproducible result comparable with high-quality a-Si:H. In addition, the optical gap of a-C:H has been tailored between a wide range, 1.8-3.1 eV. The ESR spectra of all the films reveal a single Lorentzian line whose linewidth ΔHpp varies strongly with the optical gap. Also, there is a strong dependence of spin density on the optical gap, and we show that this dependency is a direct result of structural changes due to sp3/sp2 carbon bonding network., application/pdf},
 pages = {294--296},
 title = {Low density of defect states in hydrogenated amorphous carbon thin films grown by plasma-enhanced chemical vapor deposition},
 volume = {78},
 year = {2001}
}