{"created":"2023-05-15T12:35:50.192398+00:00","id":4911,"links":{},"metadata":{"_buckets":{"deposit":"0ffaeb19-0b0a-49cb-91eb-11e8c2113add"},"_deposit":{"created_by":3,"id":"4911","owners":[3],"pid":{"revision_id":0,"type":"depid","value":"4911"},"status":"published"},"_oai":{"id":"oai:nitech.repo.nii.ac.jp:00004911","sets":["31"]},"author_link":["4028","3257","4015","16089","15847","16090","16088"],"item_10001_biblio_info_28":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2001-01-15","bibliographicIssueDateType":"Issued"},"bibliographicIssueNumber":"3","bibliographicPageEnd":"296","bibliographicPageStart":"294","bibliographicVolumeNumber":"78","bibliographic_titles":[{"bibliographic_title":"APPLIED PHYSICS LETTERS"}]}]},"item_10001_description_36":{"attribute_name":"内容記述","attribute_value_mlt":[{"subitem_description":"The density of electronic defect states in most forms of amorphous carbon deposited at room temperature is found so far to be very high (1018-1022 spinscm-3). In this letter, we demonstrate that the radio-frequency plasma-enhanced chemical vapor deposited hydrogenated amorphous carbon (a-C:H) thin film exhibits the lowest spin density of the order of 1016cm-3, investigated by using electron spin resonance (ESR) spectroscopy, a very promising reproducible result comparable with high-quality a-Si:H. In addition, the optical gap of a-C:H has been tailored between a wide range, 1.8-3.1 eV. The ESR spectra of all the films reveal a single Lorentzian line whose linewidth ΔHpp varies strongly with the optical gap. Also, there is a strong dependence of spin density on the optical gap, and we show that this dependency is a direct result of structural changes due to sp3/sp2 carbon bonding network.","subitem_description_type":"Other"}]},"item_10001_description_38":{"attribute_name":"フォーマット","attribute_value_mlt":[{"subitem_description":"application/pdf","subitem_description_type":"Other"}]},"item_10001_full_name_27":{"attribute_name":"著者別名","attribute_value_mlt":[{"nameIdentifiers":[{},{}],"names":[{"name":"曾我, 哲夫"}]},{"nameIdentifiers":[{}],"names":[{"name":"神保, 孝志"}]},{"nameIdentifiers":[{}],"names":[{"name":"梅野, 正義"}]}]},"item_10001_publisher_29":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"American Institute of Physics"}]},"item_10001_relation_34":{"attribute_name":"DOI","attribute_value_mlt":[{"subitem_relation_name":[{"subitem_relation_name_text":"10.1063/1.1335548"}],"subitem_relation_type":"isIdenticalTo","subitem_relation_type_id":{"subitem_relation_type_id_text":"http://dx.doi.org/10.1063/1.1335548","subitem_relation_type_select":"DOI"}}]},"item_10001_source_id_30":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"00036951","subitem_source_identifier_type":"ISSN"}]},"item_10001_source_id_32":{"attribute_name":"書誌レコードID（NCID）","attribute_value_mlt":[{"subitem_source_identifier":"AA00543432","subitem_source_identifier_type":"NCID"}]},"item_10001_version_type_33":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_970fb48d4fbd8a85","subitem_version_type":"VoR"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Krishna, K. M.","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Ebisu, H.","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Hagimoto, K.","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Hayashi, Y.","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Soga, Tetsuo","creatorNameLang":"en"}],"nameIdentifiers":[{},{}]},{"creatorNames":[{"creatorName":"Jimbo, Takashi","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Umeno, Masayoshi","creatorNameLang":"en"}],"nameIdentifiers":[{}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2017-01-25"}],"displaytype":"detail","filename":"APL 78_294.pdf","filesize":[{"value":"53.8 kB"}],"format":"application/pdf","license_note":"Copyright (2001) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.The following article appeared in Applied physics letters, 78(3), pp.294-296; 2001 and may be found at http://link.aip.org/link/?apl/78/294","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"本文_fulltext","url":"https://nitech.repo.nii.ac.jp/record/4911/files/APL 78_294.pdf"},"version_id":"40d29244-0064-4d46-8494-2955e3ddd437"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"Low density of defect states in hydrogenated amorphous carbon thin films grown by plasma-enhanced chemical vapor deposition","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Low density of defect states in hydrogenated amorphous carbon thin films grown by plasma-enhanced chemical vapor deposition","subitem_title_language":"en"}]},"item_type_id":"10001","owner":"3","path":["31"],"pubdate":{"attribute_name":"公開日","attribute_value":"2012-11-06"},"publish_date":"2012-11-06","publish_status":"0","recid":"4911","relation_version_is_last":true,"title":["Low density of defect states in hydrogenated amorphous carbon thin films grown by plasma-enhanced chemical vapor deposition"],"weko_creator_id":"3","weko_shared_id":3},"updated":"2023-05-15T14:39:48.860827+00:00"}