{"created":"2023-05-15T12:35:50.235805+00:00","id":4912,"links":{},"metadata":{"_buckets":{"deposit":"1b11612d-fff3-48be-8f46-020dbd0d98ba"},"_deposit":{"created_by":3,"id":"4912","owners":[3],"pid":{"revision_id":0,"type":"depid","value":"4912"},"status":"published"},"_oai":{"id":"oai:nitech.repo.nii.ac.jp:00004912","sets":["31"]},"author_link":["522","4028","4015","16097","14056","13619"],"item_10001_biblio_info_28":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2001-01-15","bibliographicIssueDateType":"Issued"},"bibliographicIssueNumber":"2","bibliographicPageEnd":"1052","bibliographicPageStart":"1046","bibliographicVolumeNumber":"89","bibliographic_titles":[{"bibliographic_title":"JOURNAL OF APPLIED PHYSICS"}]}]},"item_10001_description_36":{"attribute_name":"内容記述","attribute_value_mlt":[{"subitem_description":"The normal-incidence reflectance measurement was employed to obtain the free exciton transition energy (EFX) of AlGaN alloys in AlxGa1-xN/GaN/sapphire heterostructure grown by metalorganic chemical vapor deposition. It was found that the thickness variation of the AlGaN layer may cause a noticeable change in the line shape of reflectance spectrum and impede the identification of the desired excitonic position. By using a reflection model of two absorbing layers with a transparent substrate, the experimental reflectance spectra were theoretically simulated and utilized to explain the reflection mechanism in AlxGa1-xN/GaN heterostructures. On the basis of the above analysis, the feasibility of the reflectance measurement for such heterostructures is confirmed. At room temperature, the EFXs obtained from the fitting showed an excellent agreement with the corresponding peak energies in the photoluminescence spectra. Furthermore, at the optical energy position about 100 meV above the EFX, the spectral feature of exciton-LO phonon interaction was observed in the reflectance spectrum record for low Al composition (x?0.16). Using the Al mole fraction derived from x-ray diffraction measurement, the bowing parameter of the epitaxial AlGaN layer was determined. In the range of 0?x<0.3, the resulting bowing parameter shows a downward value of 0.53 eV.","subitem_description_type":"Other"}]},"item_10001_description_38":{"attribute_name":"フォーマット","attribute_value_mlt":[{"subitem_description":"application/pdf","subitem_description_type":"Other"}]},"item_10001_full_name_27":{"attribute_name":"著者別名","attribute_value_mlt":[{"nameIdentifiers":[{},{}],"names":[{"name":"江川, 孝志"}]},{"nameIdentifiers":[{}],"names":[{"name":"神保, 孝志"}]},{"nameIdentifiers":[{}],"names":[{"name":"梅野, 正義"}]}]},"item_10001_publisher_29":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"American Institute of Physics"}]},"item_10001_relation_34":{"attribute_name":"DOI","attribute_value_mlt":[{"subitem_relation_name":[{"subitem_relation_name_text":"10.1063/1.1334923"}],"subitem_relation_type":"isIdenticalTo","subitem_relation_type_id":{"subitem_relation_type_id_text":"http://dx.doi.org/10.1063/1.1334923","subitem_relation_type_select":"DOI"}}]},"item_10001_source_id_30":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"00218979","subitem_source_identifier_type":"ISSN"}]},"item_10001_source_id_32":{"attribute_name":"書誌レコードID（NCID）","attribute_value_mlt":[{"subitem_source_identifier":"AA00693547","subitem_source_identifier_type":"NCID"}]},"item_10001_version_type_33":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_970fb48d4fbd8a85","subitem_version_type":"VoR"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Jiang, H.","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Zhao, G. Y.","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Ishikawa, H.","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Egawa, Takashi","creatorNameLang":"en"}],"nameIdentifiers":[{},{}]},{"creatorNames":[{"creatorName":"Jimbo, Takashi","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Umeno, Masayoshi","creatorNameLang":"en"}],"nameIdentifiers":[{}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2017-01-25"}],"displaytype":"detail","filename":"JAP 89_1046.pdf","filesize":[{"value":"141.1 kB"}],"format":"application/pdf","license_note":"Copyright (2001) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.The following article appeared in Journal of Applied Physics, 89(2), pp.1046- 1052 ; 2001 and may be found at http://link.aip.org/link/?jap/89/1046","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"本文_fulltext","url":"https://nitech.repo.nii.ac.jp/record/4912/files/JAP 89_1046.pdf"},"version_id":"756c72ed-d250-4b10-a30c-d26f2f1553b7"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"Determination of exciton transition energy and bowing parameter of AlGaN alloys in AlGaN/GaN heterostructure by means of reflectance measurement","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Determination of exciton transition energy and bowing parameter of AlGaN alloys in AlGaN/GaN heterostructure by means of reflectance measurement","subitem_title_language":"en"}]},"item_type_id":"10001","owner":"3","path":["31"],"pubdate":{"attribute_name":"公開日","attribute_value":"2012-11-06"},"publish_date":"2012-11-06","publish_status":"0","recid":"4912","relation_version_is_last":true,"title":["Determination of exciton transition energy and bowing parameter of AlGaN alloys in AlGaN/GaN heterostructure by means of reflectance measurement"],"weko_creator_id":"3","weko_shared_id":3},"updated":"2023-05-15T14:39:29.529926+00:00"}