{"created":"2023-05-15T12:35:51.448548+00:00","id":4941,"links":{},"metadata":{"_buckets":{"deposit":"18fce0fa-317e-4bc0-adbb-56691257b587"},"_deposit":{"created_by":3,"id":"4941","owners":[3],"pid":{"revision_id":0,"type":"depid","value":"4941"},"status":"published"},"_oai":{"id":"oai:nitech.repo.nii.ac.jp:00004941","sets":["31"]},"author_link":["16253","7433","16251","13081","16252"],"item_10001_biblio_info_28":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2001-04-15","bibliographicIssueDateType":"Issued"},"bibliographicIssueNumber":"8","bibliographicPageEnd":"4647","bibliographicPageStart":"4643","bibliographicVolumeNumber":"89","bibliographic_titles":[{"bibliographic_title":"JOURNAL OF APPLIED PHYSICS"}]}]},"item_10001_description_36":{"attribute_name":"内容記述","attribute_value_mlt":[{"subitem_description":"The crystallization of amorphous Ge(a-Ge) in an Al (134 nm) and a-Ge (108 nm) thin-film bilayer deposited on a SiO2 substrate has been examined by a cross section transmission electron microscope technique. When crystallization of a-Ge begins at 125°C, amorphous AlGe (a-AlGe) alloy is formed in the Ge layer. Then, the a-AlGe alloy layer also appeared at the surface of the bilayer. After complete crystallization, those amorphous layers disappeared and the bilayer film has been converted to a polycrystalline film. We discussed the crystallization of a-Ge and proposed the mechanism of the diffusion of Ge atoms from the inner a-Ge layer through the outer Al layer to the topmost surface that involves the formation of the metastable a-AlGe alloy in the Ge layer, followed by the crystallization of this alloy by the pseudo-eutectic reaction, leading to the decomposition into an equilibrium Al and Ge crystal mixture and a-Ge. Then, Ge atoms is released to the Al layer for the compensation of the Al diffusion down into the Ge layer and again forms the a-AlGe alloy in the Al layer. The a-AlGe alloy in the Al layer is also crystallized by the pseudo-eutectic reaction. Consequently, decomposed a-Ge is ejected from the inside to the surface of the bilayer, resulting in the surface Ge segregation.","subitem_description_type":"Other"}]},"item_10001_description_38":{"attribute_name":"フォーマット","attribute_value_mlt":[{"subitem_description":"application/pdf","subitem_description_type":"Other"}]},"item_10001_full_name_27":{"attribute_name":"著者別名","attribute_value_mlt":[{"nameIdentifiers":[{}],"names":[{"name":"土井, 稔"}]}]},"item_10001_publisher_29":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"American Institute of Physics"}]},"item_10001_relation_34":{"attribute_name":"DOI","attribute_value_mlt":[{"subitem_relation_name":[{"subitem_relation_name_text":"10.1063/1.1359149"}],"subitem_relation_type":"isIdenticalTo","subitem_relation_type_id":{"subitem_relation_type_id_text":"http://dx.doi.org/10.1063/1.1359149","subitem_relation_type_select":"DOI"}}]},"item_10001_source_id_30":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"00218979","subitem_source_identifier_type":"ISSN"}]},"item_10001_source_id_32":{"attribute_name":"書誌レコードID（NCID）","attribute_value_mlt":[{"subitem_source_identifier":"AA00693547","subitem_source_identifier_type":"NCID"}]},"item_10001_version_type_33":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_970fb48d4fbd8a85","subitem_version_type":"VoR"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Katsuki, Futoshi","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Hanafusa, Kenji","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Yonemura, Mitsuharu","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Koyama, Toshiyuki","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Doi, Minoru","creatorNameLang":"en"}],"nameIdentifiers":[{}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2017-01-25"}],"displaytype":"detail","filename":"JAP 89_4643.pdf","filesize":[{"value":"591.0 kB"}],"format":"application/pdf","license_note":"Copyright (2001) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.The following article appeared in Journal of Applied Physics, 89(8), pp.4643- 4647 ; 2001 and may be found at http://link.aip.org/link/?jap/89/4643","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"本文_fulltext","url":"https://nitech.repo.nii.ac.jp/record/4941/files/JAP 89_4643.pdf"},"version_id":"c535b489-11f9-4fa9-af95-6b183702005c"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"Crystallization of amorphous germanium in an Al/a-Ge bilayer film deposited on a SiO2 substrate","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Crystallization of amorphous germanium in an Al/a-Ge bilayer film deposited on a SiO2 substrate","subitem_title_language":"en"}]},"item_type_id":"10001","owner":"3","path":["31"],"pubdate":{"attribute_name":"公開日","attribute_value":"2012-11-06"},"publish_date":"2012-11-06","publish_status":"0","recid":"4941","relation_version_is_last":true,"title":["Crystallization of amorphous germanium in an Al/a-Ge bilayer film deposited on a SiO2 substrate"],"weko_creator_id":"3","weko_shared_id":-1},"updated":"2023-05-16T14:41:33.385384+00:00"}