@article{oai:nitech.repo.nii.ac.jp:00004946,
 author = {Saravanan, S. and Hayashi, Y. and Soga, Tetsuo and Jimbo, Takashi and Umeno, Masayoshi and Sato, N. and Yonehara, T.},
 issue = {9},
 journal = {JOURNAL OF APPLIED PHYSICS},
 month = {May},
 note = {The initial growth of GaAs films on a Si/porous Si/Si (SPS) substrate has been investigated using reflection high-energy electron diffraction. The morphology and the thickness have been examined by a Nomarski optical microscope and scanning electron microscope, respectively. The results of the low temperature photoluminescence studies have shown that a significant reduction in the residual thermal tensile stress can be achieved with reduced growth temperature. The 77 K photoluminescence spectra for GaAs/Si show a strain-induced splitting between the heavy and light hole valence bands which corresponds to a biaxial tensile stress of 2.45 kbar acting on the GaAs layer where the same for GaAs/SPS grown at 450°C is 1.69 kbar. The results have shown that a SPS substrate with the combination of low temperature growth is a promising candidate for obtaining GaAs films with low stress., application/pdf},
 pages = {5215--5218},
 title = {Growth and characterization of GaAs epitaxial layers on Si/porous Si/Si substrate by chemical beam epitaxy},
 volume = {89},
 year = {2001}
}