@article{oai:nitech.repo.nii.ac.jp:00004956,
 author = {Wang, G. and Ogawa, T. and Soga, Tetsuo and Jimbo, Takashi and Umeno, Masayoshi},
 issue = {22},
 journal = {APPLIED PHYSICS LETTERS},
 month = {May},
 note = {The phosphidization effect on dislocations in GaAs grown on Si substrate (GaAs/Si) has been investigated. It was found that the high density of dislocations in GaAs/Si heteroepitaxial layers largely enhanced the diffusion of phosphorus (P) atoms during the phosphine (PH3) plasma exposure. The incorporated P atoms strongly passivated the electrical states of residual dislocations in GaAs/Si solar cell. As a result, the PH3 plasma exposure largely increased the open circuit voltage (Voc) and the efficiency of GaAs/Si solar cell., application/pdf},
 pages = {3463--3465},
 title = {Passivation of dislocations in GaAs grown on Si substrates by phosphine (PH3) plasma exposure},
 volume = {78},
 year = {2001}
}