{"created":"2023-05-15T12:35:52.083313+00:00","id":4956,"links":{},"metadata":{"_buckets":{"deposit":"09d02d56-80d5-4703-b4ad-a4a468ca22ae"},"_deposit":{"created_by":3,"id":"4956","owners":[3],"pid":{"revision_id":0,"type":"depid","value":"4956"},"status":"published"},"_oai":{"id":"oai:nitech.repo.nii.ac.jp:00004956","sets":["31"]},"author_link":["13922","4028","16328","3257","4015"],"item_10001_biblio_info_28":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2001-05-28","bibliographicIssueDateType":"Issued"},"bibliographicIssueNumber":"22","bibliographicPageEnd":"3465","bibliographicPageStart":"3463","bibliographicVolumeNumber":"78","bibliographic_titles":[{"bibliographic_title":"APPLIED PHYSICS LETTERS"}]}]},"item_10001_description_36":{"attribute_name":"内容記述","attribute_value_mlt":[{"subitem_description":"The phosphidization effect on dislocations in GaAs grown on Si substrate (GaAs/Si) has been investigated. It was found that the high density of dislocations in GaAs/Si heteroepitaxial layers largely enhanced the diffusion of phosphorus (P) atoms during the phosphine (PH3) plasma exposure. The incorporated P atoms strongly passivated the electrical states of residual dislocations in GaAs/Si solar cell. As a result, the PH3 plasma exposure largely increased the open circuit voltage (Voc) and the efficiency of GaAs/Si solar cell.","subitem_description_type":"Other"}]},"item_10001_description_38":{"attribute_name":"フォーマット","attribute_value_mlt":[{"subitem_description":"application/pdf","subitem_description_type":"Other"}]},"item_10001_full_name_27":{"attribute_name":"著者別名","attribute_value_mlt":[{"nameIdentifiers":[{},{}],"names":[{"name":"曾我, 哲夫"}]},{"nameIdentifiers":[{}],"names":[{"name":"神保, 孝志"}]},{"nameIdentifiers":[{}],"names":[{"name":"梅野, 正義"}]}]},"item_10001_publisher_29":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"American Institute of Physics"}]},"item_10001_relation_34":{"attribute_name":"DOI","attribute_value_mlt":[{"subitem_relation_name":[{"subitem_relation_name_text":"10.1063/1.1376433"}],"subitem_relation_type":"isIdenticalTo","subitem_relation_type_id":{"subitem_relation_type_id_text":"http://dx.doi.org/10.1063/1.1376433","subitem_relation_type_select":"DOI"}}]},"item_10001_source_id_30":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"00036951","subitem_source_identifier_type":"ISSN"}]},"item_10001_source_id_32":{"attribute_name":"書誌レコードID（NCID）","attribute_value_mlt":[{"subitem_source_identifier":"AA00543432","subitem_source_identifier_type":"NCID"}]},"item_10001_version_type_33":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_970fb48d4fbd8a85","subitem_version_type":"VoR"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Wang, G.","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Ogawa, T.","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Soga, Tetsuo","creatorNameLang":"en"}],"nameIdentifiers":[{},{}]},{"creatorNames":[{"creatorName":"Jimbo, Takashi","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Umeno, Masayoshi","creatorNameLang":"en"}],"nameIdentifiers":[{}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2017-01-25"}],"displaytype":"detail","filename":"APL 78_3463.pdf","filesize":[{"value":"192.5 kB"}],"format":"application/pdf","license_note":"Copyright (2001) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.The following article appeared in Applied physics letters, 78(22), pp.3463-3465; 2001 and may be found at http://link.aip.org/link/?apl/78/3463","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"本文_fulltext","url":"https://nitech.repo.nii.ac.jp/record/4956/files/APL 78_3463.pdf"},"version_id":"f58d2e33-9915-476c-9734-2b5303539d23"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"Passivation of dislocations in GaAs grown on Si substrates by phosphine (PH3) plasma exposure","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Passivation of dislocations in GaAs grown on Si substrates by phosphine (PH3) plasma exposure","subitem_title_language":"en"}]},"item_type_id":"10001","owner":"3","path":["31"],"pubdate":{"attribute_name":"公開日","attribute_value":"2012-11-06"},"publish_date":"2012-11-06","publish_status":"0","recid":"4956","relation_version_is_last":true,"title":["Passivation of dislocations in GaAs grown on Si substrates by phosphine (PH3) plasma exposure"],"weko_creator_id":"3","weko_shared_id":3},"updated":"2023-05-15T14:38:05.431539+00:00"}