@article{oai:nitech.repo.nii.ac.jp:00004964,
 author = {Hayashi, Y. and Yu, G. and Rahman, M. M. and Krishna, K. M. and Soga, Tetsuo and Jimbo, Takashi and Umeno, Masayoshi},
 issue = {25},
 journal = {APPLIED PHYSICS LETTERS},
 month = {Jun},
 note = {Nitrogen-doped hydrogenated amorphous carbon films have been deposited on silicon substrates by radio-frequency plasma-enhanced chemical vapor deposition using different N2/CH4 gas ratios from 0 to 3. The real and imaginary parts, n and k, of the complex index of refraction of these films have been determined for wavelengths between 300 and 830 nm by spectroscopic ellipsometry. Excellent agreement has been found between measured and modeled spectra, in which an empirical dielectric function based on classical Lorentz oscillator and Tauc joint density of states, and a linear void distribution along the thickness of the films have been assumed. Decrease in the optical energy gap and increase in the extinction coefficient, k, with increase in nitrogen concentration have been observed. Refractive index, n, increases rapidly with increase in nitrogen concentration up to 6.8 at.% (?7.0 at.%) and then increases slowly with further increase in nitrogen concentration. For all the samples, n is found to be highest at the film-substrate interface which gradually decreases towards the film surface., application/pdf},
 pages = {3962--3964},
 title = {Determination  of optical properties of nitrogen-doped hydrogenated amorphous carbon films by spectroscopic ellipsometry},
 volume = {78},
 year = {2001}
}