{"created":"2023-05-15T12:35:54.745539+00:00","id":5020,"links":{},"metadata":{"_buckets":{"deposit":"58577f3b-2494-4746-a7a9-c8817a7643ce"},"_deposit":{"created_by":3,"id":"5020","owners":[3],"pid":{"revision_id":0,"type":"depid","value":"5020"},"status":"published"},"_oai":{"id":"oai:nitech.repo.nii.ac.jp:00005020","sets":["31"]},"author_link":["522","4015","16641","4028"],"item_10001_biblio_info_28":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2001-12-01","bibliographicIssueDateType":"Issued"},"bibliographicIssueNumber":"11","bibliographicPageEnd":"5468","bibliographicPageStart":"5463","bibliographicVolumeNumber":"90","bibliographic_titles":[{"bibliographic_title":"JOURNAL OF APPLIED PHYSICS"}]}]},"item_10001_description_36":{"attribute_name":"内容記述","attribute_value_mlt":[{"subitem_description":"The growth conditions of low-dimensional dot structures of strained InxGa1-xAs on Si substrates using the Stranski-Krastanov growth mode by metal-organic chemical vapor deposition are optimized. Atomic force microscopy measurement has been performed to characterize the dot structures. The dot density and their size are found to be strongly dependent on the substrate temperature, In content, and V/III ratio. The optimized growth condition was further used to fabricate quantum dot-like laser diodes on Si. The characteristics of the laser diode with an InxGa1-xAs quantum dot-like active region are analyzed.","subitem_description_type":"Other"}]},"item_10001_description_38":{"attribute_name":"フォーマット","attribute_value_mlt":[{"subitem_description":"application/pdf","subitem_description_type":"Other"}]},"item_10001_full_name_27":{"attribute_name":"著者別名","attribute_value_mlt":[{"nameIdentifiers":[{},{}],"names":[{"name":"江川, 孝志"}]},{"nameIdentifiers":[{}],"names":[{"name":"梅野, 正義"}]},{"nameIdentifiers":[{}],"names":[{"name":"神保, 孝志"}]}]},"item_10001_publisher_29":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"American Institute of Physics"}]},"item_10001_relation_34":{"attribute_name":"DOI","attribute_value_mlt":[{"subitem_relation_name":[{"subitem_relation_name_text":"10.1063/1.1375010"}],"subitem_relation_type":"isIdenticalTo","subitem_relation_type_id":{"subitem_relation_type_id_text":"http://dx.doi.org/10.1063/1.1375010","subitem_relation_type_select":"DOI"}}]},"item_10001_source_id_30":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"00218979","subitem_source_identifier_type":"ISSN"}]},"item_10001_source_id_32":{"attribute_name":"書誌レコードID（NCID）","attribute_value_mlt":[{"subitem_source_identifier":"AA00693547","subitem_source_identifier_type":"NCID"}]},"item_10001_version_type_33":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_970fb48d4fbd8a85","subitem_version_type":"VoR"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Kazi, Zaman Iqbal","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Egawa, Takashi","creatorNameLang":"en"}],"nameIdentifiers":[{},{}]},{"creatorNames":[{"creatorName":"Umeno, Masayoshi","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Jimbo, Takashi","creatorNameLang":"en"}],"nameIdentifiers":[{}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2017-01-25"}],"displaytype":"detail","filename":"JAP 90_5463.pdf","filesize":[{"value":"325.9 kB"}],"format":"application/pdf","license_note":"Copyright (2001) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.The following article appeared in Journal of Applied Physics, 90(11), pp.5463 - 5468; 2001 and may be found at http://link.aip.org/link/?jap/90/5463","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"本文_fulltext","url":"https://nitech.repo.nii.ac.jp/record/5020/files/JAP 90_5463.pdf"},"version_id":"1dabdd41-dde5-4185-9218-81dbe3bb0a1c"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"Growth of InxGa1-xAs quantum dots by metal-organic chemical vapor deposition on Si substrates and in GaAs-based lasers","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Growth of InxGa1-xAs quantum dots by metal-organic chemical vapor deposition on Si substrates and in GaAs-based lasers","subitem_title_language":"en"}]},"item_type_id":"10001","owner":"3","path":["31"],"pubdate":{"attribute_name":"公開日","attribute_value":"2012-11-06"},"publish_date":"2012-11-06","publish_status":"0","recid":"5020","relation_version_is_last":true,"title":["Growth of InxGa1-xAs quantum dots by metal-organic chemical vapor deposition on Si substrates and in GaAs-based lasers"],"weko_creator_id":"3","weko_shared_id":3},"updated":"2023-05-15T14:36:02.928119+00:00"}