{"created":"2023-05-15T12:35:55.036587+00:00","id":5027,"links":{},"metadata":{"_buckets":{"deposit":"d51ea726-d4f9-409e-86df-e09d58ee44a9"},"_deposit":{"created_by":91,"id":"5027","owners":[91],"pid":{"revision_id":0,"type":"depid","value":"5027"},"status":"published"},"_oai":{"id":"oai:nitech.repo.nii.ac.jp:00005027","sets":["31"]},"author_link":["522","4028","4015","522","16678","16679","13619","4028","4015"],"item_10001_biblio_info_28":{"attribute_name":"bibliographic_information","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2002-01-01","bibliographicIssueDateType":"Issued"},"bibliographicIssueNumber":"1","bibliographicPageEnd":"530","bibliographicPageStart":"528","bibliographicVolumeNumber":"91","bibliographic_titles":[{"bibliographic_title":"JOURNAL OF APPLIED PHYSICS","bibliographic_titleLang":"en"}]}]},"item_10001_description_36":{"attribute_name":"内容記述","attribute_value_mlt":[{"subitem_description":"We report the characteristics of InGaN multiple-quantum-well (MQW) green light-emitting diodes (LEDs) on Si (111) substrates. The MQW LEDs were grown on Si by metalorganic chemical vapor deposition using Al0.27Ga0.73N/AlN intermediate layers. The LED on Si showed an operating voltage of 7 V, a series resistance of 100 Ω, an optical output power of 20 μW, and a peak emission wavelength of 505 nm with a full width at half maximum of 33 nm at 20 mA drive current. The optical output power was half as compared to that of green LED on sapphire. The LED also exhibited a stable operation over 500 h under automatic current control (20 mA) condition at 27°C.","subitem_description_language":"en","subitem_description_type":"Other"}]},"item_10001_full_name_27":{"attribute_name":"著者別名","attribute_value_mlt":[{"familyNames":[{"familyName":"Egawa","familyNameLang":"en"},{"familyName":"江川","familyNameLang":"ja"},{"familyName":"エガワ","familyNameLang":"ja-Kana"}],"givenNames":[{"givenName":"Takashi","givenNameLang":"en"},{"givenName":"孝志","givenNameLang":"ja"},{"givenName":"タカシ","givenNameLang":"ja-Kana"}],"nameIdentifiers":[{"nameIdentifier":"522","nameIdentifierScheme":"WEKO"}],"names":[{"name":"Egawa, Takashi","nameLang":"en"},{"name":"江川, 孝志","nameLang":"ja"},{"name":"エガワ, タカシ","nameLang":"ja-Kana"}]},{"nameIdentifiers":[{"nameIdentifier":"4028","nameIdentifierScheme":"WEKO"}],"names":[{"name":"神保, 孝志"}]},{"nameIdentifiers":[{"nameIdentifier":"4015","nameIdentifierScheme":"WEKO"}],"names":[{"name":"梅野, 正義"}]}]},"item_10001_publisher_29":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"American Institute of Physics","subitem_publisher_language":"en"}]},"item_10001_relation_34":{"attribute_name":"item_10001_relation_34","attribute_value_mlt":[{"subitem_relation_name":[{"subitem_relation_name_text":"10.1063/1.1408264"}],"subitem_relation_type":"isIdenticalTo","subitem_relation_type_id":{"subitem_relation_type_id_text":"http://dx.doi.org/10.1063/1.1408264","subitem_relation_type_select":"DOI"}}]},"item_10001_source_id_30":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"0021-8979","subitem_source_identifier_type":"ISSN"}]},"item_10001_source_id_32":{"attribute_name":"item_10001_source_id_32","attribute_value_mlt":[{"subitem_source_identifier":"AA00693547","subitem_source_identifier_type":"NCID"}]},"item_10001_version_type_33":{"attribute_name":"出版タイプ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_970fb48d4fbd8a85","subitem_version_type":"VoR"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorAffiliations":[{"affiliationNameIdentifiers":[{"affiliationNameIdentifierScheme":"ISNI","affiliationNameIdentifierURI":"http://www.isni.org/isni/"}],"affiliationNames":[{"affiliationNameLang":"ja"}]}],"creatorNames":[{"creatorName":"Egawa, Takashi","creatorNameLang":"en"},{"creatorName":"江川, 孝志","creatorNameLang":"ja"},{"creatorName":"エガワ, タカシ","creatorNameLang":"ja-Kana"}],"familyNames":[{"familyName":"Egawa","familyNameLang":"en"},{"familyName":"江川","familyNameLang":"ja"},{"familyName":"エガワ","familyNameLang":"ja-Kana"}],"givenNames":[{"givenName":"Takashi","givenNameLang":"en"},{"givenName":"孝志","givenNameLang":"ja"},{"givenName":"タカシ","givenNameLang":"ja-Kana"}],"nameIdentifiers":[{"nameIdentifier":"522","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Zhang, B.","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"16678","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Nishikawa, N.","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"16679","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Ishikawa, H.","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"13619","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Jimbo, Takashi","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"4028","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Umeno, Masayoshi","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"4015","nameIdentifierScheme":"WEKO"}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2017-01-25"}],"displaytype":"detail","filename":"JAP 91_528.pdf","filesize":[{"value":"63.2 kB"}],"format":"application/pdf","license_note":"Copyright (2002) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.The following article appeared in Journal of Applied Physics, 91(1), pp.528- 530 ; 2002 and may be found at http://link.aip.org/link/?jap/91/528","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"本文_fulltext","url":"https://nitech.repo.nii.ac.jp/record/5027/files/JAP 91_528.pdf"},"version_id":"828dce73-c87b-43cf-83c4-c8be4fe774d9"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"item_resource_type","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"InGaN multiple-quantum-well green light-emitting diodes on Si grown by metalorganic chemical vapor deposition","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"InGaN multiple-quantum-well green light-emitting diodes on Si grown by metalorganic chemical vapor deposition","subitem_title_language":"en"}]},"item_type_id":"10001","owner":"91","path":["31"],"pubdate":{"attribute_name":"PubDate","attribute_value":"2012-11-06"},"publish_date":"2012-11-06","publish_status":"0","recid":"5027","relation_version_is_last":true,"title":["InGaN multiple-quantum-well green light-emitting diodes on Si grown by metalorganic chemical vapor deposition"],"weko_creator_id":"91","weko_shared_id":-1},"updated":"2025-03-19T01:45:33.181434+00:00"}