{"created":"2023-05-15T12:35:55.832830+00:00","id":5046,"links":{},"metadata":{"_buckets":{"deposit":"2346b285-c3c0-44d5-a0ff-f92389b49698"},"_deposit":{"created_by":3,"id":"5046","owners":[3],"pid":{"revision_id":0,"type":"depid","value":"5046"},"status":"published"},"_oai":{"id":"oai:nitech.repo.nii.ac.jp:00005046","sets":["31"]},"author_link":["522","13619","4028","14387"],"item_10001_biblio_info_28":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2002-03-25","bibliographicIssueDateType":"Issued"},"bibliographicIssueNumber":"12","bibliographicPageEnd":"2188","bibliographicPageStart":"2186","bibliographicVolumeNumber":"80","bibliographic_titles":[{"bibliographic_title":"APPLIED PHYSICS LETTERS"}]}]},"item_10001_description_36":{"attribute_name":"内容記述","attribute_value_mlt":[{"subitem_description":"The high-electron-mobility transistors (HEMTs) have been demonstrated on both sapphire and semi-insulating (SI) SiC substrates, and the dc characteristics of the fabricated devices were examined at temperatures ranging from 25 to 500°C. The decrease in drain current and the transconductance with the increase of temperature have been observed. The decrease ratio of transconductance and drain current was similar for both the HEMTs on sapphire and SI-SiC substrates at and above 300°C. The HEMTs on SiC substrates showed better dc characteristics after being subjected to thermal stress up to 500°C. Although the SiC-based HEMTs showed better characteristics up to the temperature of 300°C, compared with the sapphire-based HEMTs, similar dc characteristics were observed on both at and above 300°C. For high-temperature applications (?300°C), additional cooling arrangements are essential for both devices.","subitem_description_type":"Other"}]},"item_10001_description_38":{"attribute_name":"フォーマット","attribute_value_mlt":[{"subitem_description":"application/pdf","subitem_description_type":"Other"}]},"item_10001_full_name_27":{"attribute_name":"著者別名","attribute_value_mlt":[{"nameIdentifiers":[{},{}],"names":[{"name":"江川, 孝志"}]},{"nameIdentifiers":[{}],"names":[{"name":"神保, 孝志"}]}]},"item_10001_publisher_29":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"American Institute of Physics"}]},"item_10001_relation_34":{"attribute_name":"DOI","attribute_value_mlt":[{"subitem_relation_name":[{"subitem_relation_name_text":"10.1063/1.1461420"}],"subitem_relation_type":"isIdenticalTo","subitem_relation_type_id":{"subitem_relation_type_id_text":"http://dx.doi.org/10.1063/1.1461420","subitem_relation_type_select":"DOI"}}]},"item_10001_source_id_30":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"00036951","subitem_source_identifier_type":"ISSN"}]},"item_10001_source_id_32":{"attribute_name":"書誌レコードID（NCID）","attribute_value_mlt":[{"subitem_source_identifier":"AA00543432","subitem_source_identifier_type":"NCID"}]},"item_10001_version_type_33":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_970fb48d4fbd8a85","subitem_version_type":"VoR"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Arulkumaran, S.","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Egawa, Takashi","creatorNameLang":"en"}],"nameIdentifiers":[{},{}]},{"creatorNames":[{"creatorName":"Ishikawa, H.","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Jimbo, Takashi","creatorNameLang":"en"}],"nameIdentifiers":[{}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2017-01-25"}],"displaytype":"detail","filename":"APL 80_2186.pdf","filesize":[{"value":"63.3 kB"}],"format":"application/pdf","license_note":"Copyright (2002) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.The following article appeared in Applied physics letters, 80(12),pp.2186 -2188; 2002 and may be found at http://link.aip.org/link/?apl/80/2186","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"本文_fulltext","url":"https://nitech.repo.nii.ac.jp/record/5046/files/APL 80_2186.pdf"},"version_id":"019a90e3-3575-444a-b1d8-0d91a49b6eff"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"High-temperature effects of AlGaN/GaN high-electron-mobility transistors on sapphire and semi-insulating SiC substrates","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"High-temperature effects of AlGaN/GaN high-electron-mobility transistors on sapphire and semi-insulating SiC substrates","subitem_title_language":"en"}]},"item_type_id":"10001","owner":"3","path":["31"],"pubdate":{"attribute_name":"公開日","attribute_value":"2012-11-06"},"publish_date":"2012-11-06","publish_status":"0","recid":"5046","relation_version_is_last":true,"title":["High-temperature effects of AlGaN/GaN high-electron-mobility transistors on sapphire and semi-insulating SiC substrates"],"weko_creator_id":"3","weko_shared_id":3},"updated":"2023-05-15T14:35:23.234190+00:00"}