{"created":"2023-05-15T12:35:56.544983+00:00","id":5063,"links":{},"metadata":{"_buckets":{"deposit":"31975d43-2366-48ff-9726-a5de8adc6085"},"_deposit":{"created_by":91,"id":"5063","owners":[91],"pid":{"revision_id":0,"type":"depid","value":"5063"},"status":"published"},"_oai":{"id":"oai:nitech.repo.nii.ac.jp:00005063","sets":["31"]},"author_link":["3523","3523","16870","4387","16872","16873"],"item_10001_biblio_info_28":{"attribute_name":"bibliographic_information","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2002-06-10","bibliographicIssueDateType":"Issued"},"bibliographicIssueNumber":"23","bibliographicPageEnd":"4392","bibliographicPageStart":"4390","bibliographicVolumeNumber":"80","bibliographic_titles":[{"bibliographic_title":"APPLIED PHYSICS LETTERS","bibliographic_titleLang":"en"}]}]},"item_10001_description_36":{"attribute_name":"内容記述","attribute_value_mlt":[{"subitem_description":"We attempted to measure the bulk carrier recombination lifetime of Si wafers by the microwave reflectance photoconductivity decay (PCD) method. Voltage was applied between an external electrode and a Si wafer to suppress surface recombination. Before the measurement, the surface state density was reduced by a chemical treatment using NH4OH-H2O2-H2O and diluted HF solutions. Carrier lifetime as long as 1 ms was measured by the present method for a wafer with a bare surface. Comparison with results for oxidized wafers show that the present method can suppress surface recombination more effectively than thermal oxidation, which has been often used for surface passivation in PCD measurements.","subitem_description_language":"en","subitem_description_type":"Other"}]},"item_10001_full_name_27":{"attribute_name":"著者別名","attribute_value_mlt":[{"nameIdentifiers":[{"nameIdentifier":"3523","nameIdentifierScheme":"WEKO"},{"nameIdentifier":"1000030203110","nameIdentifierScheme":"NRID","nameIdentifierURI":"http://rns.nii.ac.jp/nr/1000030203110"}],"names":[{"name":"市村, 正也"}]}]},"item_10001_publisher_29":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"American Institute of Physics","subitem_publisher_language":"en"}]},"item_10001_relation_34":{"attribute_name":"item_10001_relation_34","attribute_value_mlt":[{"subitem_relation_name":[{"subitem_relation_name_text":"10.1063/1.1483114"}],"subitem_relation_type":"isIdenticalTo","subitem_relation_type_id":{"subitem_relation_type_id_text":"http://dx.doi.org/10.1063/1.1483114","subitem_relation_type_select":"DOI"}}]},"item_10001_source_id_30":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"0003-6951","subitem_source_identifier_type":"ISSN"}]},"item_10001_source_id_32":{"attribute_name":"item_10001_source_id_32","attribute_value_mlt":[{"subitem_source_identifier":"AA00543431","subitem_source_identifier_type":"NCID"}]},"item_10001_version_type_33":{"attribute_name":"出版タイプ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_970fb48d4fbd8a85","subitem_version_type":"VoR"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Ichimura, Masaya","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"3523","nameIdentifierScheme":"WEKO"},{"nameIdentifier":"1000030203110","nameIdentifierScheme":"NRID","nameIdentifierURI":"http://rns.nii.ac.jp/nr/1000030203110"}]},{"creatorNames":[{"creatorName":"Tada, Atsushi","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"16870","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Arai, Eisuke","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"4387","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Takamatsu, Hiroyuki","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"16872","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Sumie, Shingo","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"16873","nameIdentifierScheme":"WEKO"}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2017-01-25"}],"displaytype":"detail","filename":"APL 80_4390.pdf","filesize":[{"value":"52.9 kB"}],"format":"application/pdf","license_note":"Copyright (2002) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.The following article appeared in Applied physics letters, 80(23),pp.4390-4392 ; 2002 and may be found at http://link.aip.org/link/?apl/80/4390","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"本文_fulltext","url":"https://nitech.repo.nii.ac.jp/record/5063/files/APL 80_4390.pdf"},"version_id":"2176bac5-ebbb-404f-aa0d-c87bca9470cc"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"item_resource_type","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"Bulk carrier lifetime measurement by the microwave reflectance photoconductivity decay method with external surface electric field","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Bulk carrier lifetime measurement by the microwave reflectance photoconductivity decay method with external surface electric field","subitem_title_language":"en"}]},"item_type_id":"10001","owner":"91","path":["31"],"pubdate":{"attribute_name":"PubDate","attribute_value":"2012-11-06"},"publish_date":"2012-11-06","publish_status":"0","recid":"5063","relation_version_is_last":true,"title":["Bulk carrier lifetime measurement by the microwave reflectance photoconductivity decay method with external surface electric field"],"weko_creator_id":"91","weko_shared_id":-1},"updated":"2025-03-19T02:45:41.459062+00:00"}