@article{oai:nitech.repo.nii.ac.jp:00005064,
 author = {Hayashi, Y. and Matsushita, Y. and Soga, Tetsuo and Umeno, Masayoshi and Jimbo, Takashi},
 issue = {12},
 journal = {JOURNAL OF APPLIED PHYSICS},
 month = {Jun},
 note = {The initial nucleation of diamond film on a Si substrate, deposited by a three-step growth process together with a cycle bias enhanced nucleation (BEN) growth/H2 plasma etching technique in a microwave plasma enhanced chemical vapor deposition system has been investigated by atomic force microscopy, Raman spectroscopy and x-ray photoelectron spectroscopy. The surface morphology and the uniformity of {100}-oriented textured grains at the BEN step were found to be greatly increased by applying the cyclic process with some optimal H2 plasma etching time during the BEN stage., application/pdf},
 pages = {9752--9756},
 title = {Role of cyclic process in the initial stage of diamond deposition during bias enhanced nucleation},
 volume = {91},
 year = {2002}
}