{"created":"2023-05-15T12:35:56.586085+00:00","id":5064,"links":{},"metadata":{"_buckets":{"deposit":"b39f5bb3-a6bc-4323-8404-3cdce7bcb8c0"},"_deposit":{"created_by":3,"id":"5064","owners":[3],"pid":{"revision_id":0,"type":"depid","value":"5064"},"status":"published"},"_oai":{"id":"oai:nitech.repo.nii.ac.jp:00005064","sets":["31"]},"author_link":["4028","16876","3257","4015","16090"],"item_10001_biblio_info_28":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2002-06-15","bibliographicIssueDateType":"Issued"},"bibliographicIssueNumber":"12","bibliographicPageEnd":"9756","bibliographicPageStart":"9752","bibliographicVolumeNumber":"91","bibliographic_titles":[{"bibliographic_title":"JOURNAL OF APPLIED PHYSICS"}]}]},"item_10001_description_36":{"attribute_name":"内容記述","attribute_value_mlt":[{"subitem_description":"The initial nucleation of diamond film on a Si substrate, deposited by a three-step growth process together with a cycle bias enhanced nucleation (BEN) growth/H2 plasma etching technique in a microwave plasma enhanced chemical vapor deposition system has been investigated by atomic force microscopy, Raman spectroscopy and x-ray photoelectron spectroscopy. The surface morphology and the uniformity of {100}-oriented textured grains at the BEN step were found to be greatly increased by applying the cyclic process with some optimal H2 plasma etching time during the BEN stage.","subitem_description_type":"Other"}]},"item_10001_description_38":{"attribute_name":"フォーマット","attribute_value_mlt":[{"subitem_description":"application/pdf","subitem_description_type":"Other"}]},"item_10001_full_name_27":{"attribute_name":"著者別名","attribute_value_mlt":[{"nameIdentifiers":[{},{}],"names":[{"name":"曾我, 哲夫"}]},{"nameIdentifiers":[{}],"names":[{"name":"梅野, 正義"}]},{"nameIdentifiers":[{}],"names":[{"name":"神保, 孝志"}]}]},"item_10001_publisher_29":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"American Institute of Physics"}]},"item_10001_relation_34":{"attribute_name":"DOI","attribute_value_mlt":[{"subitem_relation_name":[{"subitem_relation_name_text":"10.1063/1.1480116"}],"subitem_relation_type":"isIdenticalTo","subitem_relation_type_id":{"subitem_relation_type_id_text":"http://dx.doi.org/10.1063/1.1480116","subitem_relation_type_select":"DOI"}}]},"item_10001_source_id_30":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"00218979","subitem_source_identifier_type":"ISSN"}]},"item_10001_source_id_32":{"attribute_name":"書誌レコードID（NCID）","attribute_value_mlt":[{"subitem_source_identifier":"AA00693547","subitem_source_identifier_type":"NCID"}]},"item_10001_version_type_33":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_970fb48d4fbd8a85","subitem_version_type":"VoR"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Hayashi, Y.","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Matsushita, Y.","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Soga, Tetsuo","creatorNameLang":"en"}],"nameIdentifiers":[{},{}]},{"creatorNames":[{"creatorName":"Umeno, Masayoshi","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Jimbo, Takashi","creatorNameLang":"en"}],"nameIdentifiers":[{}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2017-01-25"}],"displaytype":"detail","filename":"JAP 91_9752.pdf","filesize":[{"value":"182.0 kB"}],"format":"application/pdf","license_note":"Copyright (2002) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.The following article appeared in Journal of Applied Physics, 91(12), pp.9752- 9756 ; 2002 and may be found at http://link.aip.org/link/?jap/91/9752","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"本文_fulltext","url":"https://nitech.repo.nii.ac.jp/record/5064/files/JAP 91_9752.pdf"},"version_id":"1265235c-bacc-4751-960f-2631075caa31"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"Role of cyclic process in the initial stage of diamond deposition during bias enhanced nucleation","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Role of cyclic process in the initial stage of diamond deposition during bias enhanced nucleation","subitem_title_language":"en"}]},"item_type_id":"10001","owner":"3","path":["31"],"pubdate":{"attribute_name":"公開日","attribute_value":"2012-11-06"},"publish_date":"2012-11-06","publish_status":"0","recid":"5064","relation_version_is_last":true,"title":["Role of cyclic process in the initial stage of diamond deposition during bias enhanced nucleation"],"weko_creator_id":"3","weko_shared_id":3},"updated":"2023-05-15T14:34:43.388758+00:00"}