{"created":"2023-05-15T12:35:56.751821+00:00","id":5068,"links":{},"metadata":{"_buckets":{"deposit":"5b2f228b-3b0a-4ebb-8f8f-84e88ca49edb"},"_deposit":{"created_by":91,"id":"5068","owners":[91],"pid":{"revision_id":0,"type":"depid","value":"5068"},"status":"published"},"_oai":{"id":"oai:nitech.repo.nii.ac.jp:00005068","sets":["31"]},"author_link":["4028","16895","4028"],"item_10001_biblio_info_28":{"attribute_name":"bibliographic_information","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2002-06-24","bibliographicIssueDateType":"Issued"},"bibliographicIssueNumber":"25","bibliographicPageEnd":"4758","bibliographicPageStart":"4756","bibliographicVolumeNumber":"80","bibliographic_titles":[{"bibliographic_title":"APPLIED PHYSICS LETTERS","bibliographic_titleLang":"en"}]}]},"item_10001_description_36":{"attribute_name":"内容記述","attribute_value_mlt":[{"subitem_description":"Electrical characterization of SiO2/n-GaN metal-insulator-semiconductor structures fabricated on sapphire substrates was performed by using high-frequency pulsed capacitance-voltage and capacitance-transient techniques. Fast and slow capacitance transients are clearly seen after applying reverse voltages, reflecting thermal emissions of carriers from the SiO2/GaN interface. The temperature dependence of the capacitance-voltage characteristics shows capacitance saturation in deep depletion (>15 V), which is probably associated with the slow capacitance transient. Deep-level transient spectroscopic measurements reveal two interface traps with activation energies of 0.71 and ?0.76 eV from the conduction band, corresponding to the fast and slow capacitance transients, respectively. Therefore, the observed capacitance saturation may be due to Fermi-level pinning induced by the latter interface trap.","subitem_description_language":"en","subitem_description_type":"Other"}]},"item_10001_full_name_27":{"attribute_name":"著者別名","attribute_value_mlt":[{"nameIdentifiers":[{"nameIdentifier":"4028","nameIdentifierScheme":"WEKO"}],"names":[{"name":"神保, 孝志"}]}]},"item_10001_publisher_29":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"American Institute of Physics","subitem_publisher_language":"en"}]},"item_10001_relation_34":{"attribute_name":"item_10001_relation_34","attribute_value_mlt":[{"subitem_relation_name":[{"subitem_relation_name_text":"10.1063/1.1486266"}],"subitem_relation_type":"isIdenticalTo","subitem_relation_type_id":{"subitem_relation_type_id_text":"http://dx.doi.org/10.1063/1.1486266","subitem_relation_type_select":"DOI"}}]},"item_10001_source_id_30":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"0003-6951","subitem_source_identifier_type":"ISSN"}]},"item_10001_source_id_32":{"attribute_name":"item_10001_source_id_32","attribute_value_mlt":[{"subitem_source_identifier":"AA00543432","subitem_source_identifier_type":"NCID"}]},"item_10001_version_type_33":{"attribute_name":"出版タイプ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_970fb48d4fbd8a85","subitem_version_type":"VoR"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Nakano, Yoshitaka","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"16895","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Jimbo, Takashi","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"4028","nameIdentifierScheme":"WEKO"}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2017-01-25"}],"displaytype":"detail","filename":"APL 80_4756.pdf","filesize":[{"value":"67.2 kB"}],"format":"application/pdf","license_note":"Copyright (2002) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.The following article appeared in Applied physics letters, 80(25),pp.4756 -4758; 2002 and may be found at http://link.aip.org/link/?apl/80/4756","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"本文_fulltext","url":"https://nitech.repo.nii.ac.jp/record/5068/files/APL 80_4756.pdf"},"version_id":"76b52ea7-2f7b-4771-8e60-adfbafc5927e"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"item_resource_type","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"Interface properties of SiO2/n-GaN metal-insulator-semiconductor structures","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Interface properties of SiO2/n-GaN metal-insulator-semiconductor structures","subitem_title_language":"en"}]},"item_type_id":"10001","owner":"91","path":["31"],"pubdate":{"attribute_name":"PubDate","attribute_value":"2012-11-06"},"publish_date":"2012-11-06","publish_status":"0","recid":"5068","relation_version_is_last":true,"title":["Interface properties of SiO2/n-GaN metal-insulator-semiconductor structures"],"weko_creator_id":"91","weko_shared_id":-1},"updated":"2025-03-19T02:45:51.923005+00:00"}