@article{oai:nitech.repo.nii.ac.jp:00005074,
 author = {Egawa, Takashi and Omura, H. and Ishikawa, H. and Jimbo, Takashi},
 issue = {2},
 journal = {APPLIED PHYSICS LETTERS},
 month = {Jul},
 note = {Structural, electrical, and optical properties of an InGaN-based light-emitting diode (LED) on an AlN/sapphire template have been studied and compared with the conventional LED properties on a sapphire substrate. In comparison to the LED on sapphire, the LED on AlN/sapphire template has shown better electrical and optical characteristics, which are due to a low threading dislocation density, high resistive, and thermal conductive AlN layer. An additional advantage is to grow a high-quality LED structure on an AlN/sapphire template without using low-temperature-grown GaN or an AlN buffer layer., application/pdf},
 pages = {292--294},
 title = {Demonstration of an InGaN-based light-emitting diode on an AlN/sapphire template by metalorganic chemical vapor deposition},
 volume = {81},
 year = {2002}
}