{"created":"2023-05-15T12:35:56.998784+00:00","id":5074,"links":{},"metadata":{"_buckets":{"deposit":"35e8cfc3-30c9-4026-9708-cbef55b0abbc"},"_deposit":{"created_by":3,"id":"5074","owners":[3],"pid":{"revision_id":0,"type":"depid","value":"5074"},"status":"published"},"_oai":{"id":"oai:nitech.repo.nii.ac.jp:00005074","sets":["31"]},"author_link":["522","13619","16918","4028"],"item_10001_biblio_info_28":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2002-07-08","bibliographicIssueDateType":"Issued"},"bibliographicIssueNumber":"2","bibliographicPageEnd":"294","bibliographicPageStart":"292","bibliographicVolumeNumber":"81","bibliographic_titles":[{"bibliographic_title":"APPLIED PHYSICS LETTERS"}]}]},"item_10001_description_36":{"attribute_name":"内容記述","attribute_value_mlt":[{"subitem_description":"Structural, electrical, and optical properties of an InGaN-based light-emitting diode (LED) on an AlN/sapphire template have been studied and compared with the conventional LED properties on a sapphire substrate. In comparison to the LED on sapphire, the LED on AlN/sapphire template has shown better electrical and optical characteristics, which are due to a low threading dislocation density, high resistive, and thermal conductive AlN layer. An additional advantage is to grow a high-quality LED structure on an AlN/sapphire template without using low-temperature-grown GaN or an AlN buffer layer.","subitem_description_type":"Other"}]},"item_10001_description_38":{"attribute_name":"フォーマット","attribute_value_mlt":[{"subitem_description":"application/pdf","subitem_description_type":"Other"}]},"item_10001_full_name_27":{"attribute_name":"著者別名","attribute_value_mlt":[{"nameIdentifiers":[{},{}],"names":[{"name":"江川, 孝志"}]},{"nameIdentifiers":[{}],"names":[{"name":"神保, 孝志"}]}]},"item_10001_publisher_29":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"American Institute of Physics"}]},"item_10001_relation_34":{"attribute_name":"DOI","attribute_value_mlt":[{"subitem_relation_name":[{"subitem_relation_name_text":"10.1063/1.1492857"}],"subitem_relation_type":"isIdenticalTo","subitem_relation_type_id":{"subitem_relation_type_id_text":"http://dx.doi.org/10.1063/1.1492857","subitem_relation_type_select":"DOI"}}]},"item_10001_source_id_30":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"00036951","subitem_source_identifier_type":"ISSN"}]},"item_10001_source_id_32":{"attribute_name":"書誌レコードID（NCID）","attribute_value_mlt":[{"subitem_source_identifier":"AA00543432","subitem_source_identifier_type":"NCID"}]},"item_10001_version_type_33":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_970fb48d4fbd8a85","subitem_version_type":"VoR"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Egawa, Takashi","creatorNameLang":"en"}],"nameIdentifiers":[{},{}]},{"creatorNames":[{"creatorName":"Omura, H.","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Ishikawa, H.","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Jimbo, Takashi","creatorNameLang":"en"}],"nameIdentifiers":[{}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2017-01-25"}],"displaytype":"detail","filename":"APL 81_292.pdf","filesize":[{"value":"161.9 kB"}],"format":"application/pdf","license_note":"Copyright (2002) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.The following article appeared in Applied physics letters, 81(2),pp.292 -294; 2002 and may be found at http://link.aip.org/link/?apl/81/292","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"本文_fulltext","url":"https://nitech.repo.nii.ac.jp/record/5074/files/APL 81_292.pdf"},"version_id":"7ee2e98a-b630-4e2f-bbba-7061205e4549"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"Demonstration of an InGaN-based light-emitting diode on an AlN/sapphire template by metalorganic chemical vapor deposition","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Demonstration of an InGaN-based light-emitting diode on an AlN/sapphire template by metalorganic chemical vapor deposition","subitem_title_language":"en"}]},"item_type_id":"10001","owner":"3","path":["31"],"pubdate":{"attribute_name":"公開日","attribute_value":"2012-11-06"},"publish_date":"2012-11-06","publish_status":"0","recid":"5074","relation_version_is_last":true,"title":["Demonstration of an InGaN-based light-emitting diode on an AlN/sapphire template by metalorganic chemical vapor deposition"],"weko_creator_id":"3","weko_shared_id":3},"updated":"2023-05-15T14:34:40.100536+00:00"}