{"created":"2023-05-15T12:35:58.079700+00:00","id":5100,"links":{},"metadata":{"_buckets":{"deposit":"cbd1aa83-4573-41d8-ad87-d0f6086aba50"},"_deposit":{"created_by":3,"id":"5100","owners":[3],"pid":{"revision_id":0,"type":"depid","value":"5100"},"status":"published"},"_oai":{"id":"oai:nitech.repo.nii.ac.jp:00005100","sets":["31"]},"author_link":["17053","4028"],"item_10001_biblio_info_28":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2002-11-01","bibliographicIssueDateType":"Issued"},"bibliographicIssueNumber":"9","bibliographicPageEnd":"5592","bibliographicPageStart":"5590","bibliographicVolumeNumber":"92","bibliographic_titles":[{"bibliographic_title":"JOURNAL OF APPLIED PHYSICS"}]}]},"item_10001_description_36":{"attribute_name":"内容記述","attribute_value_mlt":[{"subitem_description":"Thermal admittance and current deep-level transient spectroscopy techniques have been applied to Schottky diodes fabricated on Mg-doped GaN grown by metalorganic chemical vapor deposition to investigate the dependence of the Mg acceptor levels on the annealing temperature. Both measurement techniques revealed two deep acceptor levels with activation energies at ?135 and ?160 meV above the valence band. The former level was only seen when the samples were annealed at temperatures between 650 and 700°C, and its presence corresponds with a significant increase in effective acceptor concentration, as confirmed by capacitance-voltage measurements. Therefore, this acceptor level is considered to dominate the electrical activation of Mg in GaN.","subitem_description_type":"Other"}]},"item_10001_description_38":{"attribute_name":"フォーマット","attribute_value_mlt":[{"subitem_description":"application/pdf","subitem_description_type":"Other"}]},"item_10001_full_name_27":{"attribute_name":"著者別名","attribute_value_mlt":[{"nameIdentifiers":[{}],"names":[{"name":"神保, 孝志"}]}]},"item_10001_publisher_29":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"American Institute of Physics"}]},"item_10001_relation_34":{"attribute_name":"DOI","attribute_value_mlt":[{"subitem_relation_name":[{"subitem_relation_name_text":"10.1063/1.1512681"}],"subitem_relation_type":"isIdenticalTo","subitem_relation_type_id":{"subitem_relation_type_id_text":"http://dx.doi.org/10.1063/1.1512681","subitem_relation_type_select":"DOI"}}]},"item_10001_source_id_30":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"00218979","subitem_source_identifier_type":"ISSN"}]},"item_10001_source_id_32":{"attribute_name":"書誌レコードID（NCID）","attribute_value_mlt":[{"subitem_source_identifier":"AA00693547","subitem_source_identifier_type":"NCID"}]},"item_10001_version_type_33":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_970fb48d4fbd8a85","subitem_version_type":"VoR"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Nakano, Yoshitaka","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Jimbo, Takashi","creatorNameLang":"en"}],"nameIdentifiers":[{}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2017-01-25"}],"displaytype":"detail","filename":"JAP 92_5590.pdf","filesize":[{"value":"59.9 kB"}],"format":"application/pdf","license_note":"Copyright (2002) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.The following article appeared in Journal of Applied Physics, 92(9), pp.5590- 5592 ; 2002 and may be found at http://link.aip.org/link/?jap/92/5590","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"本文_fulltext","url":"https://nitech.repo.nii.ac.jp/record/5100/files/JAP 92_5590.pdf"},"version_id":"2fbf8e47-5ea4-4191-8419-4642e80e1aa2"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"Electrical  characterization of acceptor levels in Mg-doped GaN","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Electrical  characterization of acceptor levels in Mg-doped GaN","subitem_title_language":"en"}]},"item_type_id":"10001","owner":"3","path":["31"],"pubdate":{"attribute_name":"公開日","attribute_value":"2012-11-06"},"publish_date":"2012-11-06","publish_status":"0","recid":"5100","relation_version_is_last":true,"title":["Electrical  characterization of acceptor levels in Mg-doped GaN"],"weko_creator_id":"3","weko_shared_id":-1},"updated":"2023-05-16T14:40:10.137821+00:00"}