@article{oai:nitech.repo.nii.ac.jp:00005102,
 author = {Yokota, Takeshi and Fujimura, N. and Ito, T.},
 issue = {21},
 journal = {APPLIED PHYSICS LETTERS},
 month = {Nov},
 note = {A magnetic semiconductor Si:Ce thin film was prepared using a vacuum evaporation system with electron-beam guns. The as-deposited thin film was amorphous and exhibited n-type conduction. It showed temperature dependence of resistivity (ρ-T), as in a normal semiconductor, and a diamagnetic property. By annealing at 973 K, however, the film epitaxially crystallizes and the conduction changes to the p-type. The resistivity of the film abruptly decreases by three orders of magnitude below 30 K, unlike that of the as-deposited film. The magnetic susceptibility measured at a low magnetic field (750 Oe) also decreases around the same temperature in ρ-T curves. These magnetic and carrier transport phenomena are responsible for the substitutionally dissolved Ce in Si., application/pdf},
 pages = {4023--4025},
 title = {Effect of substitutionally dissolved Ce in Si on the magnetic and electric properties of magnetic semiconductor, Si1-xCex films},
 volume = {81},
 year = {2002}
}