{"created":"2023-05-15T12:35:58.163960+00:00","id":5102,"links":{},"metadata":{"_buckets":{"deposit":"d1052acc-fd80-4122-9881-a69a9c1b013b"},"_deposit":{"created_by":3,"id":"5102","owners":[3],"pid":{"revision_id":0,"type":"depid","value":"5102"},"status":"published"},"_oai":{"id":"oai:nitech.repo.nii.ac.jp:00005102","sets":["31"]},"author_link":["16853","17061","16856","17064"],"item_10001_biblio_info_28":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2002-11-18","bibliographicIssueDateType":"Issued"},"bibliographicIssueNumber":"21","bibliographicPageEnd":"4025","bibliographicPageStart":"4023","bibliographicVolumeNumber":"81","bibliographic_titles":[{"bibliographic_title":"APPLIED PHYSICS LETTERS"}]}]},"item_10001_description_36":{"attribute_name":"内容記述","attribute_value_mlt":[{"subitem_description":"A magnetic semiconductor Si:Ce thin film was prepared using a vacuum evaporation system with electron-beam guns. The as-deposited thin film was amorphous and exhibited n-type conduction. It showed temperature dependence of resistivity (ρ-T), as in a normal semiconductor, and a diamagnetic property. By annealing at 973 K, however, the film epitaxially crystallizes and the conduction changes to the p-type. The resistivity of the film abruptly decreases by three orders of magnitude below 30 K, unlike that of the as-deposited film. The magnetic susceptibility measured at a low magnetic field (750 Oe) also decreases around the same temperature in ρ-T curves. These magnetic and carrier transport phenomena are responsible for the substitutionally dissolved Ce in Si.","subitem_description_type":"Other"}]},"item_10001_description_38":{"attribute_name":"フォーマット","attribute_value_mlt":[{"subitem_description":"application/pdf","subitem_description_type":"Other"}]},"item_10001_full_name_27":{"attribute_name":"著者別名","attribute_value_mlt":[{"nameIdentifiers":[{}],"names":[{"name":"横田, 壮司"}]}]},"item_10001_publisher_29":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"American Institute of Physics"}]},"item_10001_relation_34":{"attribute_name":"DOI","attribute_value_mlt":[{"subitem_relation_name":[{"subitem_relation_name_text":"10.1063/1.1524030"}],"subitem_relation_type":"isIdenticalTo","subitem_relation_type_id":{"subitem_relation_type_id_text":"http://dx.doi.org/10.1063/1.1524030","subitem_relation_type_select":"DOI"}}]},"item_10001_source_id_30":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"00036951","subitem_source_identifier_type":"ISSN"}]},"item_10001_source_id_32":{"attribute_name":"書誌レコードID（NCID）","attribute_value_mlt":[{"subitem_source_identifier":"AA00543431","subitem_source_identifier_type":"NCID"}]},"item_10001_version_type_33":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_970fb48d4fbd8a85","subitem_version_type":"VoR"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Yokota, Takeshi","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Fujimura, N.","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Ito, T.","creatorNameLang":"en"}],"nameIdentifiers":[{}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2017-01-25"}],"displaytype":"detail","filename":"APL 81_4023.pdf","filesize":[{"value":"91.5 kB"}],"format":"application/pdf","license_note":"Copyright (2002) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.The following article appeared in Applied physics letters, 81(21),pp.4023-4025 ; 2002 and may be found at http://link.aip.org/link/?apl/81/4023","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"本文_fulltext","url":"https://nitech.repo.nii.ac.jp/record/5102/files/APL 81_4023.pdf"},"version_id":"dd80393f-d6de-4c17-bc7f-87f4afb21b34"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"Effect of substitutionally dissolved Ce in Si on the magnetic and electric properties of magnetic semiconductor, Si1-xCex films","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Effect of substitutionally dissolved Ce in Si on the magnetic and electric properties of magnetic semiconductor, Si1-xCex films","subitem_title_language":"en"}]},"item_type_id":"10001","owner":"3","path":["31"],"pubdate":{"attribute_name":"公開日","attribute_value":"2012-11-06"},"publish_date":"2012-11-06","publish_status":"0","recid":"5102","relation_version_is_last":true,"title":["Effect of substitutionally dissolved Ce in Si on the magnetic and electric properties of magnetic semiconductor, Si1-xCex films"],"weko_creator_id":"3","weko_shared_id":-1},"updated":"2023-05-16T14:39:58.999578+00:00"}