@article{oai:nitech.repo.nii.ac.jp:00005103,
 author = {Nakano, Yoshitaka and Jimbo, Takashi},
 issue = {21},
 journal = {APPLIED PHYSICS LETTERS},
 month = {Nov},
 note = {We have investigated electrically the acceptor levels that are present in Be-implanted GaN. Slight p-type conductivity was attained in undoped GaN films by Be implantation and subsequent annealing at 1050°C with a SiO2 encapsulation layer. Capacitance-frequency measurements showed a typical dispersion effect characteristic of deep acceptors in fabricated Schottky diodes. Thermal admittance spectroscopy measurements revealed a discrete deep level located at ? 231meV above the valence band. This energy level is in reasonable agreement with the frequency dependence of the capacitance in view of the impurity transition frequency. Therefore, this energy level can most probably be assigned to a Be-related deep acceptor., application/pdf},
 pages = {3990--3992},
 title = {Electrical characterization of acceptor levels in Be-implanted GaN},
 volume = {81},
 year = {2002}
}