{"created":"2023-05-15T12:35:58.205732+00:00","id":5103,"links":{},"metadata":{"_buckets":{"deposit":"7095a7aa-1801-4dac-9d2b-ff94915aa922"},"_deposit":{"created_by":91,"id":"5103","owners":[91],"pid":{"revision_id":0,"type":"depid","value":"5103"},"status":"published"},"_oai":{"id":"oai:nitech.repo.nii.ac.jp:00005103","sets":["31"]},"author_link":["4028","17065","4028"],"item_10001_biblio_info_28":{"attribute_name":"bibliographic_information","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2002-11-18","bibliographicIssueDateType":"Issued"},"bibliographicIssueNumber":"21","bibliographicPageEnd":"3992","bibliographicPageStart":"3990","bibliographicVolumeNumber":"81","bibliographic_titles":[{"bibliographic_title":"APPLIED PHYSICS LETTERS","bibliographic_titleLang":"en"}]}]},"item_10001_description_36":{"attribute_name":"内容記述","attribute_value_mlt":[{"subitem_description":"We have investigated electrically the acceptor levels that are present in Be-implanted GaN. Slight p-type conductivity was attained in undoped GaN films by Be implantation and subsequent annealing at 1050°C with a SiO2 encapsulation layer. Capacitance-frequency measurements showed a typical dispersion effect characteristic of deep acceptors in fabricated Schottky diodes. Thermal admittance spectroscopy measurements revealed a discrete deep level located at ? 231meV above the valence band. This energy level is in reasonable agreement with the frequency dependence of the capacitance in view of the impurity transition frequency. Therefore, this energy level can most probably be assigned to a Be-related deep acceptor.","subitem_description_language":"en","subitem_description_type":"Other"}]},"item_10001_full_name_27":{"attribute_name":"著者別名","attribute_value_mlt":[{"nameIdentifiers":[{"nameIdentifier":"4028","nameIdentifierScheme":"WEKO"}],"names":[{"name":"神保, 孝志"}]}]},"item_10001_publisher_29":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"American Institute of Physics","subitem_publisher_language":"en"}]},"item_10001_relation_34":{"attribute_name":"item_10001_relation_34","attribute_value_mlt":[{"subitem_relation_name":[{"subitem_relation_name_text":"10.1063/1.1523633"}],"subitem_relation_type":"isIdenticalTo","subitem_relation_type_id":{"subitem_relation_type_id_text":"http://dx.doi.org/10.1063/1.1523633","subitem_relation_type_select":"DOI"}}]},"item_10001_source_id_30":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"0003-6951","subitem_source_identifier_type":"ISSN"}]},"item_10001_source_id_32":{"attribute_name":"item_10001_source_id_32","attribute_value_mlt":[{"subitem_source_identifier":"AA00543432","subitem_source_identifier_type":"NCID"}]},"item_10001_version_type_33":{"attribute_name":"出版タイプ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_970fb48d4fbd8a85","subitem_version_type":"VoR"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Nakano, Yoshitaka","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"17065","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Jimbo, Takashi","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"4028","nameIdentifierScheme":"WEKO"}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2017-01-25"}],"displaytype":"detail","filename":"APL 81_3990.pdf","filesize":[{"value":"58.9 kB"}],"format":"application/pdf","license_note":"Copyright (2002) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.The following article appeared in Applied physics letters, 81(21),pp.3990-3992; 2002 and may be found at http://link.aip.org/link/?apl/81/3990","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"本文_fulltext","url":"https://nitech.repo.nii.ac.jp/record/5103/files/APL 81_3990.pdf"},"version_id":"62052c2f-2a12-437f-a4a9-b3269fcaa01f"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"item_resource_type","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"Electrical characterization of acceptor levels in Be-implanted GaN","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Electrical characterization of acceptor levels in Be-implanted GaN","subitem_title_language":"en"}]},"item_type_id":"10001","owner":"91","path":["31"],"pubdate":{"attribute_name":"PubDate","attribute_value":"2012-11-06"},"publish_date":"2012-11-06","publish_status":"0","recid":"5103","relation_version_is_last":true,"title":["Electrical characterization of acceptor levels in Be-implanted GaN"],"weko_creator_id":"91","weko_shared_id":-1},"updated":"2025-03-19T04:22:49.904699+00:00"}