@article{oai:nitech.repo.nii.ac.jp:00005118,
 author = {Jimbo, Takashi and Nakano, Yoshitaka},
 issue = {2},
 journal = {APPLIED PHYSICS LETTERS},
 month = {Jan},
 note = {We report on the interface properties of thermally oxidized n-GaN metal-oxide-semiconductor capacitors fabricated on sapphire substrates. 100-nm-thick β-Ga2O3 was grown by dry oxidation at 880°C for 5 h. From secondary ion mass spectrometry measurements, an intermediate Ga oxynitride layer with graded compositions is clearly observed at the β-Ga2O3/GaN interface. Capacitance-voltage measurements show a deep depletion feature and a low interface state density of ? 5.5×1010eV-1cm-2. Additionally, no discrete interface traps can be detected by deep-level transient spectroscopic measurements. These results indicate that the surface Fermi level is unpinned at the β-Ga2O3/GaN interface, which may be associated with the presence of the interfacial Ga oxynitride layer., application/pdf},
 pages = {218--220},
 title = {Interface  properties of thermally oxidized n-GaN metal-oxide-semiconductor capacitors},
 volume = {82},
 year = {2003}
}