@article{oai:nitech.repo.nii.ac.jp:00005126,
 author = {Yokota, Takeshi and Fujimura, N. and Wada, T. and Hamasaki, S. and Ito, T.},
 issue = {10},
 journal = {JOURNAL OF APPLIED PHYSICS},
 month = {Mar},
 note = {Epitaxial Si:Ce films with smooth surfaces were prepared by low temperature molecular beam epitaxy. Although as-deposited films showed positive magnetization due to the existence of Ce having been substituted in Si lattice, the conduction was n type. The conduction changed to p type as a result of hydrogen termination, indicating that the film had contained dangling bonds. The magnetization behavior of the as-deposited n-type sample is completely identical to that of the p-type sample. The temperature dependence of resistivity (ρ-T) for each sample with n-type or p-type conduction has a cusp at 150 K, which is related to the spin-glass transition. But the cusp observed in the ρ-T curve of the sample with n-type conduction is broader than that of the sample with p-type conduction. It seems to have originated from the spin dynamics in Si:Ce with different carrier types., application/pdf},
 pages = {7679--7681},
 title = {Effect of carrier for magnetic and magnetotransport properties of Si:Ce films},
 volume = {93},
 year = {2003}
}