{"created":"2023-05-15T12:35:59.220419+00:00","id":5127,"links":{},"metadata":{"_buckets":{"deposit":"2cc4eb65-3685-49e4-bba6-7aa0a79535f1"},"_deposit":{"created_by":3,"id":"5127","owners":[3],"pid":{"revision_id":0,"type":"depid","value":"5127"},"status":"published"},"_oai":{"id":"oai:nitech.repo.nii.ac.jp:00005127","sets":["31"]},"author_link":["17196","3257","13921","17197"],"item_10001_biblio_info_28":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2003-03-17","bibliographicIssueDateType":"Issued"},"bibliographicIssueNumber":"11","bibliographicPageEnd":"1732","bibliographicPageStart":"1730","bibliographicVolumeNumber":"82","bibliographic_titles":[{"bibliographic_title":"APPLIED PHYSICS LETTERS"}]}]},"item_10001_description_36":{"attribute_name":"内容記述","attribute_value_mlt":[{"subitem_description":"Infrared spectroscopic ellipsometry is used to characterize the structure of molecular-beam-epitaxial grown GaAs layers on Si(100) before and after thermal cycle (TC) annealing. The dielectric function of the GaAs epilayer has been described by the sum of a factorized form and a classical Drude model in the spectral fitting procedure. The epilayer LO phonon frequency shifts toward lower frequency with increasing TC number while the opposite is seen for TO phonon. The shift of the LO mode indicates that the tensile stress increases with increasing TC number, while the shift of the TO mode is attributed mainly to the self-energy effect in GaAs:Si. Unequal thermal diffusion of SiAs- and SiGa+ is indicated.","subitem_description_type":"Other"}]},"item_10001_description_38":{"attribute_name":"フォーマット","attribute_value_mlt":[{"subitem_description":"application/pdf","subitem_description_type":"Other"}]},"item_10001_full_name_27":{"attribute_name":"著者別名","attribute_value_mlt":[{"nameIdentifiers":[{},{}],"names":[{"name":"曾我, 哲夫"}]}]},"item_10001_publisher_29":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"American Institute of Physics"}]},"item_10001_relation_34":{"attribute_name":"DOI","attribute_value_mlt":[{"subitem_relation_name":[{"subitem_relation_name_text":"10.1063/1.1561577"}],"subitem_relation_type":"isIdenticalTo","subitem_relation_type_id":{"subitem_relation_type_id_text":"http://dx.doi.org/10.1063/1.1561577","subitem_relation_type_select":"DOI"}}]},"item_10001_source_id_30":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"00036951","subitem_source_identifier_type":"ISSN"}]},"item_10001_source_id_32":{"attribute_name":"書誌レコードID（NCID）","attribute_value_mlt":[{"subitem_source_identifier":"AA00543432","subitem_source_identifier_type":"NCID"}]},"item_10001_version_type_33":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_970fb48d4fbd8a85","subitem_version_type":"VoR"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Yu, G.","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Rowell, N. L.","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Lockwood, D. J.","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Soga, Tetsuo","creatorNameLang":"en"}],"nameIdentifiers":[{},{}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2017-01-25"}],"displaytype":"detail","filename":"APL 82_1730.pdf","filesize":[{"value":"52.6 kB"}],"format":"application/pdf","license_note":"Copyright (2003) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.The following article appeared in Applied physics letters, 82(11),pp.1730 - 1732; 2003 and may be found at http://link.aip.org/link/?apl/82/1730","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"本文_fulltext","url":"https://nitech.repo.nii.ac.jp/record/5127/files/APL 82_1730.pdf"},"version_id":"d13bb8e7-8583-4487-a4ec-8a7a1d4a17e7"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"Infrared ellipsometry of GaAs epilayers on Si(100)","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Infrared ellipsometry of GaAs epilayers on Si(100)","subitem_title_language":"en"}]},"item_type_id":"10001","owner":"3","path":["31"],"pubdate":{"attribute_name":"公開日","attribute_value":"2012-11-06"},"publish_date":"2012-11-06","publish_status":"0","recid":"5127","relation_version_is_last":true,"title":["Infrared ellipsometry of GaAs epilayers on Si(100)"],"weko_creator_id":"3","weko_shared_id":3},"updated":"2023-05-15T14:33:00.753710+00:00"}