@article{oai:nitech.repo.nii.ac.jp:00005131,
 author = {Nakano, Yoshitaka and Kachi, Tetsu and Jimbo, Takashi},
 issue = {13},
 journal = {APPLIED PHYSICS LETTERS},
 month = {Mar},
 note = {P-type regions were produced in undoped GaN films by Be+ and Be++O+ implantation and subsequent annealing at temperatures between 1000 and 1050°C. From thermal admittance spectroscopic measurements, the activation energy of the Be acceptor level was found to decrease from ?240 to ?163 meV by the implantation of additional O atoms, which is in reasonable agreement with the improvement in p-type doping characteristics determined by room-temperature Hall-effect measurements. These results indicate that Be++O+ coimplantation reduces the depth of the Be acceptor level based on a site-competition effect. Therefore, these acceptor levels are most probably attributable to Be atoms at interstitial and Ga-lattice sites., application/pdf},
 pages = {2082--2084},
 title = {Effect  of Be+ + O+ coimplantation on Be acceptors in GaN},
 volume = {82},
 year = {2003}
}