@article{oai:nitech.repo.nii.ac.jp:00005132,
 author = {Yokota, Takeshi and Fujimura, N. and Ito, T.},
 issue = {7},
 journal = {JOURNAL OF APPLIED PHYSICS},
 month = {Apr},
 note = {Magnetic and magnetotransport properties of a magnetic semiconductor, Si:Ce films, were investigated. The as-deposited films exhibit n-type conduction due to their amorphous nature, with a temperature dependence of the resistivity (ρ-T) like a normal semiconductor with diamagnetic properties. By annealing at 973 K, the conduction and the magnetic susceptibility change to the p-type and become positive, respectively. The change in the magnetic susceptibility (χ-T) at a low magnetic field of 750 Oe against the measurement temperature exhibits spin-glasslike behavior showing a cusp around 38 K (Tg). The ρ-T curve increases exponentially from 273 K to 35 K, and then drastically decreases by three orders of magnitude below 33 K. Above Tg, the magnetoresistance behavior at a magnetic field below 0.5 T can be understood as that of a semiconductor caused by the Lorentz force. Below Tg, on the other hand, an extremely large magnetoresistance, which can not be explained by a Lorentz force alone, is observed., application/pdf},
 pages = {4045--4048},
 title = {Magnetic and magnetotransport properties of solid phase epitaxially grown Si:Ce films},
 volume = {93},
 year = {2003}
}