{"created":"2023-05-15T12:35:59.432730+00:00","id":5132,"links":{},"metadata":{"_buckets":{"deposit":"90e34f12-7c93-4a1c-b636-49048cf77cf7"},"_deposit":{"created_by":3,"id":"5132","owners":[3],"pid":{"revision_id":0,"type":"depid","value":"5132"},"status":"published"},"_oai":{"id":"oai:nitech.repo.nii.ac.jp:00005132","sets":["31"]},"author_link":["17228","17231","16856","16853"],"item_10001_biblio_info_28":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2003-04-01","bibliographicIssueDateType":"Issued"},"bibliographicIssueNumber":"7","bibliographicPageEnd":"4048","bibliographicPageStart":"4045","bibliographicVolumeNumber":"93","bibliographic_titles":[{"bibliographic_title":"JOURNAL OF APPLIED PHYSICS"}]}]},"item_10001_description_36":{"attribute_name":"内容記述","attribute_value_mlt":[{"subitem_description":"Magnetic and magnetotransport properties of a magnetic semiconductor, Si:Ce films, were investigated. The as-deposited films exhibit n-type conduction due to their amorphous nature, with a temperature dependence of the resistivity (ρ-T) like a normal semiconductor with diamagnetic properties. By annealing at 973 K, the conduction and the magnetic susceptibility change to the p-type and become positive, respectively. The change in the magnetic susceptibility (χ-T) at a low magnetic field of 750 Oe against the measurement temperature exhibits spin-glasslike behavior showing a cusp around 38 K (Tg). The ρ-T curve increases exponentially from 273 K to 35 K, and then drastically decreases by three orders of magnitude below 33 K. Above Tg, the magnetoresistance behavior at a magnetic field below 0.5 T can be understood as that of a semiconductor caused by the Lorentz force. Below Tg, on the other hand, an extremely large magnetoresistance, which can not be explained by a Lorentz force alone, is observed.","subitem_description_type":"Other"}]},"item_10001_description_38":{"attribute_name":"フォーマット","attribute_value_mlt":[{"subitem_description":"application/pdf","subitem_description_type":"Other"}]},"item_10001_full_name_27":{"attribute_name":"著者別名","attribute_value_mlt":[{"nameIdentifiers":[{}],"names":[{"name":"横田, 壮司"}]}]},"item_10001_publisher_29":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"American Institute of Physics"}]},"item_10001_relation_34":{"attribute_name":"DOI","attribute_value_mlt":[{"subitem_relation_name":[{"subitem_relation_name_text":"10.1063/1.1559436"}],"subitem_relation_type":"isIdenticalTo","subitem_relation_type_id":{"subitem_relation_type_id_text":"http://dx.doi.org/10.1063/1.1559436","subitem_relation_type_select":"DOI"}}]},"item_10001_source_id_30":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"00218979","subitem_source_identifier_type":"ISSN"}]},"item_10001_source_id_32":{"attribute_name":"書誌レコードID（NCID）","attribute_value_mlt":[{"subitem_source_identifier":"AA00693547","subitem_source_identifier_type":"NCID"}]},"item_10001_version_type_33":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_970fb48d4fbd8a85","subitem_version_type":"VoR"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Yokota, Takeshi","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Fujimura, N.","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Ito, T.","creatorNameLang":"en"}],"nameIdentifiers":[{}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2017-01-25"}],"displaytype":"detail","filename":"JAP 93_4045.pdf","filesize":[{"value":"133.2 kB"}],"format":"application/pdf","license_note":"Copyright (2003) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.The following article appeared in Journal of Applied Physics, 93(7), pp.4045- 4048 ; 2003 and may be found at http://link.aip.org/link/?jap/93/4045","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"本文_fulltext","url":"https://nitech.repo.nii.ac.jp/record/5132/files/JAP 93_4045.pdf"},"version_id":"01eb76c0-da97-4aa2-89c3-60ad5884a75d"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"Magnetic and magnetotransport properties of solid phase epitaxially grown Si:Ce films","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Magnetic and magnetotransport properties of solid phase epitaxially grown Si:Ce films","subitem_title_language":"en"}]},"item_type_id":"10001","owner":"3","path":["31"],"pubdate":{"attribute_name":"公開日","attribute_value":"2012-11-06"},"publish_date":"2012-11-06","publish_status":"0","recid":"5132","relation_version_is_last":true,"title":["Magnetic and magnetotransport properties of solid phase epitaxially grown Si:Ce films"],"weko_creator_id":"3","weko_shared_id":-1},"updated":"2023-05-16T14:39:31.513826+00:00"}