@article{oai:nitech.repo.nii.ac.jp:00005133,
 author = {Nakano, Yoshitaka and Kachi, Tetsu and Jimbo, Takashi},
 issue = {15},
 journal = {APPLIED PHYSICS LETTERS},
 month = {Apr},
 note = {We report on the electrical properties of thermally oxidized p-GaN metal-oxide-semiconductor (MOS) diodes with n+ source regions fabricated on sapphire substrates. The n+ regions were selectively produced in Mg-doped GaN by Si+N coimplantation and subsequent annealing at 1300°C, and then 100-nm-thick β-Ga2O3 was grown by dry oxidation at 880°C for 5 h. Capacitance-voltage measurements at room temperature display a surface inversion feature with an onset voltage of ?2.5V and show an extremely low interface trap density less than 1×1010eV-1cm-2. These results suggest that the thermally grown β-Ga2O3/p-GaN MOS structure is a promising candidate for inversion-mode MOS field-effect transistors., application/pdf},
 pages = {2443--2445},
 title = {Electrical  properties of thermally oxidized p-GaN metal-oxide-semiconductor diodes},
 volume = {82},
 year = {2003}
}