{"created":"2023-05-15T12:35:59.474547+00:00","id":5133,"links":{},"metadata":{"_buckets":{"deposit":"a72832cd-9779-4320-b7c0-949b5396b1f1"},"_deposit":{"created_by":3,"id":"5133","owners":[3],"pid":{"revision_id":0,"type":"depid","value":"5133"},"status":"published"},"_oai":{"id":"oai:nitech.repo.nii.ac.jp:00005133","sets":["31"]},"author_link":["17232","4028","17233"],"item_10001_biblio_info_28":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2003-04-14","bibliographicIssueDateType":"Issued"},"bibliographicIssueNumber":"15","bibliographicPageEnd":"2445","bibliographicPageStart":"2443","bibliographicVolumeNumber":"82","bibliographic_titles":[{"bibliographic_title":"APPLIED PHYSICS LETTERS"}]}]},"item_10001_description_36":{"attribute_name":"内容記述","attribute_value_mlt":[{"subitem_description":"We report on the electrical properties of thermally oxidized p-GaN metal-oxide-semiconductor (MOS) diodes with n+ source regions fabricated on sapphire substrates. The n+ regions were selectively produced in Mg-doped GaN by Si+N coimplantation and subsequent annealing at 1300°C, and then 100-nm-thick β-Ga2O3 was grown by dry oxidation at 880°C for 5 h. Capacitance-voltage measurements at room temperature display a surface inversion feature with an onset voltage of ?2.5V and show an extremely low interface trap density less than 1×1010eV-1cm-2. These results suggest that the thermally grown β-Ga2O3/p-GaN MOS structure is a promising candidate for inversion-mode MOS field-effect transistors.","subitem_description_type":"Other"}]},"item_10001_description_38":{"attribute_name":"フォーマット","attribute_value_mlt":[{"subitem_description":"application/pdf","subitem_description_type":"Other"}]},"item_10001_full_name_27":{"attribute_name":"著者別名","attribute_value_mlt":[{"nameIdentifiers":[{}],"names":[{"name":"神保, 孝志"}]}]},"item_10001_publisher_29":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"American Institute of Physics"}]},"item_10001_relation_34":{"attribute_name":"DOI","attribute_value_mlt":[{"subitem_relation_name":[{"subitem_relation_name_text":"10.1063/1.1567811"}],"subitem_relation_type":"isIdenticalTo","subitem_relation_type_id":{"subitem_relation_type_id_text":"http://dx.doi.org/10.1063/1.1567811","subitem_relation_type_select":"DOI"}}]},"item_10001_source_id_30":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"00036951","subitem_source_identifier_type":"ISSN"}]},"item_10001_source_id_32":{"attribute_name":"書誌レコードID（NCID）","attribute_value_mlt":[{"subitem_source_identifier":"AA00543432","subitem_source_identifier_type":"NCID"}]},"item_10001_version_type_33":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_970fb48d4fbd8a85","subitem_version_type":"VoR"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Nakano, Yoshitaka","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Kachi, Tetsu","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Jimbo, Takashi","creatorNameLang":"en"}],"nameIdentifiers":[{}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2017-01-25"}],"displaytype":"detail","filename":"APL 82_2443.pdf","filesize":[{"value":"103.4 kB"}],"format":"application/pdf","license_note":"Copyright (2003) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.The following article appeared in Applied physics letters, 82(15),pp.2443-2445; 2003 and may be found at http://link.aip.org/link/?apl/82/2443","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"本文_fulltext","url":"https://nitech.repo.nii.ac.jp/record/5133/files/APL 82_2443.pdf"},"version_id":"b3e0ada0-d632-40b8-a6d3-15d8430a2224"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"Electrical  properties of thermally oxidized p-GaN metal-oxide-semiconductor diodes","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Electrical  properties of thermally oxidized p-GaN metal-oxide-semiconductor diodes","subitem_title_language":"en"}]},"item_type_id":"10001","owner":"3","path":["31"],"pubdate":{"attribute_name":"公開日","attribute_value":"2012-11-06"},"publish_date":"2012-11-06","publish_status":"0","recid":"5133","relation_version_is_last":true,"title":["Electrical  properties of thermally oxidized p-GaN metal-oxide-semiconductor diodes"],"weko_creator_id":"3","weko_shared_id":-1},"updated":"2023-05-16T14:39:31.006428+00:00"}