@article{oai:nitech.repo.nii.ac.jp:00005138,
 author = {Arulkumaran, S. and Egawa, Takashi and Ishikawa, H. and Jimbo, Takashi},
 issue = {18},
 journal = {APPLIED PHYSICS LETTERS},
 month = {May},
 note = {We report on the studies of the temperature dependence of gate-leakage current in AlGaN/GaN high-electron-mobility transistors (HEMTs) for the temperature range 20-400°C. The results show that the temperature dependence of gate-leakage current for AlGaN/GaN HEMTs at subthreshold regime (VGS = -6.5V) have both negative and positive trends. It has been observed that the leakage current decreases with the temperature up to 80°C. Above 80°C, the leakage current increases with the temperature. The negative temperature dependence of leakage current with the activation energy +0.61 eV is due to the impact ionization. The positive temperature dependence of leakage current with the activation energy -0.20 eV is due to the surface related traps, and the activation energy -0.99 eV is due to the temperature assisted tunneling mechanism. The drain voltage at a fixed drain-leakage current reveals the occurrence of both positive (+0.28 V/K) and negative (-0.53 V/K) temperature coefficients., application/pdf},
 pages = {3110--3112},
 title = {Temperature dependence of gate-leakage current in AlGaN/GaN high-electron-mobility transistors},
 volume = {82},
 year = {2003}
}