{"created":"2023-05-15T12:35:59.684747+00:00","id":5138,"links":{},"metadata":{"_buckets":{"deposit":"882b32ea-9110-4871-b36f-e6c5f998a6eb"},"_deposit":{"created_by":3,"id":"5138","owners":[3],"pid":{"revision_id":0,"type":"depid","value":"5138"},"status":"published"},"_oai":{"id":"oai:nitech.repo.nii.ac.jp:00005138","sets":["31"]},"author_link":["522","13619","4028","14387"],"item_10001_biblio_info_28":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2003-05-05","bibliographicIssueDateType":"Issued"},"bibliographicIssueNumber":"18","bibliographicPageEnd":"3112","bibliographicPageStart":"3110","bibliographicVolumeNumber":"82","bibliographic_titles":[{"bibliographic_title":"APPLIED PHYSICS LETTERS"}]}]},"item_10001_description_36":{"attribute_name":"内容記述","attribute_value_mlt":[{"subitem_description":"We report on the studies of the temperature dependence of gate-leakage current in AlGaN/GaN high-electron-mobility transistors (HEMTs) for the temperature range 20-400°C. The results show that the temperature dependence of gate-leakage current for AlGaN/GaN HEMTs at subthreshold regime (VGS = -6.5V) have both negative and positive trends. It has been observed that the leakage current decreases with the temperature up to 80°C. Above 80°C, the leakage current increases with the temperature. The negative temperature dependence of leakage current with the activation energy +0.61 eV is due to the impact ionization. The positive temperature dependence of leakage current with the activation energy -0.20 eV is due to the surface related traps, and the activation energy -0.99 eV is due to the temperature assisted tunneling mechanism. The drain voltage at a fixed drain-leakage current reveals the occurrence of both positive (+0.28 V/K) and negative (-0.53 V/K) temperature coefficients.","subitem_description_type":"Other"}]},"item_10001_description_38":{"attribute_name":"フォーマット","attribute_value_mlt":[{"subitem_description":"application/pdf","subitem_description_type":"Other"}]},"item_10001_full_name_27":{"attribute_name":"著者別名","attribute_value_mlt":[{"nameIdentifiers":[{},{}],"names":[{"name":"江川, 孝志"}]},{"nameIdentifiers":[{}],"names":[{"name":"神保, 孝志"}]}]},"item_10001_publisher_29":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"American Institute of Physics"}]},"item_10001_relation_34":{"attribute_name":"DOI","attribute_value_mlt":[{"subitem_relation_name":[{"subitem_relation_name_text":"10.1063/1.1571655"}],"subitem_relation_type":"isIdenticalTo","subitem_relation_type_id":{"subitem_relation_type_id_text":"http://dx.doi.org/10.1063/1.1571655","subitem_relation_type_select":"DOI"}}]},"item_10001_source_id_30":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"00036951","subitem_source_identifier_type":"ISSN"}]},"item_10001_source_id_32":{"attribute_name":"書誌レコードID（NCID）","attribute_value_mlt":[{"subitem_source_identifier":"AA00543432","subitem_source_identifier_type":"NCID"}]},"item_10001_version_type_33":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_970fb48d4fbd8a85","subitem_version_type":"VoR"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Arulkumaran, S.","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Egawa, Takashi","creatorNameLang":"en"}],"nameIdentifiers":[{},{}]},{"creatorNames":[{"creatorName":"Ishikawa, H.","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Jimbo, Takashi","creatorNameLang":"en"}],"nameIdentifiers":[{}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2017-01-25"}],"displaytype":"detail","filename":"APL 82_3110.pdf","filesize":[{"value":"132.9 kB"}],"format":"application/pdf","license_note":"Copyright (2003) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.The following article appeared in Applied physics letters, 82(18),pp.3110-3112; 2003 and may be found at http://link.aip.org/link/?apl/82/3110","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"本文_fulltext","url":"https://nitech.repo.nii.ac.jp/record/5138/files/APL 82_3110.pdf"},"version_id":"35b078fd-8c08-437b-8061-bbdb69e5bcb2"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"Temperature dependence of gate-leakage current in AlGaN/GaN high-electron-mobility transistors","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Temperature dependence of gate-leakage current in AlGaN/GaN high-electron-mobility transistors","subitem_title_language":"en"}]},"item_type_id":"10001","owner":"3","path":["31"],"pubdate":{"attribute_name":"公開日","attribute_value":"2012-11-06"},"publish_date":"2012-11-06","publish_status":"0","recid":"5138","relation_version_is_last":true,"title":["Temperature dependence of gate-leakage current in AlGaN/GaN high-electron-mobility transistors"],"weko_creator_id":"3","weko_shared_id":3},"updated":"2023-05-15T14:32:40.692404+00:00"}