@article{oai:nitech.repo.nii.ac.jp:00005145,
 author = {Chandrasekaran, N. and Soga, Tetsuo and Jimbo, Takashi},
 issue = {22},
 journal = {APPLIED PHYSICS LETTERS},
 month = {Jun},
 note = {A process to transplant GaAs film from a Ge substrate to Si substrate using a direct bonding method is proposed. The scanning electron microscopy picture shows that the GaAs film is uniformly transplanted from Ge to Si. The high-resolution transmission electron microscopy image shows that GaAs is connected to Si by the covalent bonds. The stress of the bonded GaAs on Si is compared with GaAs/GaAs and heteroepitaxially grown GaAs/Ge(before bonding) by a 4.2 K photoluminescence method. The difference in the residual stress between the bonded GaAs/Si sample and GaAs/Si grown by two-step growth is explained by a thermal stress relaxation mechanism during the cooling process., application/pdf},
 pages = {3892--3894},
 title = {GaAs film on Si substrate transplanted from GaAs/Ge structure by direct bonding},
 volume = {82},
 year = {2003}
}