{"created":"2023-05-15T12:36:00.563090+00:00","id":5159,"links":{},"metadata":{"_buckets":{"deposit":"a926ad9c-cf84-4729-80f9-e5fc8da48ee7"},"_deposit":{"created_by":91,"id":"5159","owners":[91],"pid":{"revision_id":0,"type":"depid","value":"5159"},"status":"published"},"_oai":{"id":"oai:nitech.repo.nii.ac.jp:00005159","sets":["31"]},"author_link":["3523","17372","3523","4387"],"item_10001_biblio_info_28":{"attribute_name":"bibliographic_information","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2003-08-04","bibliographicIssueDateType":"Issued"},"bibliographicIssueNumber":"5","bibliographicPageEnd":"930","bibliographicPageStart":"928","bibliographicVolumeNumber":"83","bibliographic_titles":[{"bibliographic_title":"APPLIED PHYSICS LETTERS","bibliographic_titleLang":"en"}]}]},"item_10001_description_36":{"attribute_name":"内容記述","attribute_value_mlt":[{"subitem_description":"The interface recombination velocity of silicon-on-insulator (SOI) wafers was measured by the microwave-reflectance photoconductivity-decay method. The carrier lifetime was obtained with interface recombination suppressed by applying voltage between the SOI layer and the substrate. The interface recombination velocity was then estimated by comparing two lifetime values with and without voltage application. The velocity is from 500 to 1800 cm/s, relatively large as for thermally oxidized Si/SiO2 interfaces.","subitem_description_language":"en","subitem_description_type":"Other"}]},"item_10001_full_name_27":{"attribute_name":"著者別名","attribute_value_mlt":[{"nameIdentifiers":[{"nameIdentifier":"3523","nameIdentifierScheme":"WEKO"},{"nameIdentifier":"1000030203110","nameIdentifierScheme":"NRID","nameIdentifierURI":"http://rns.nii.ac.jp/nr/1000030203110"}],"names":[{"name":"市村, 正也"}]}]},"item_10001_publisher_29":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"American Institute of Physics","subitem_publisher_language":"en"}]},"item_10001_relation_34":{"attribute_name":"item_10001_relation_34","attribute_value_mlt":[{"subitem_relation_name":[{"subitem_relation_name_text":"10.1063/1.1597988"}],"subitem_relation_type":"isIdenticalTo","subitem_relation_type_id":{"subitem_relation_type_id_text":"http://dx.doi.org/10.1063/1.1597988","subitem_relation_type_select":"DOI"}}]},"item_10001_source_id_30":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"0003-6951","subitem_source_identifier_type":"ISSN"}]},"item_10001_source_id_32":{"attribute_name":"item_10001_source_id_32","attribute_value_mlt":[{"subitem_source_identifier":"AA00543431","subitem_source_identifier_type":"NCID"}]},"item_10001_version_type_33":{"attribute_name":"出版タイプ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_970fb48d4fbd8a85","subitem_version_type":"VoR"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Kuwayama, Toshio","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"17372","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Ichimura, Masaya","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"3523","nameIdentifierScheme":"WEKO"},{"nameIdentifier":"1000030203110","nameIdentifierScheme":"NRID","nameIdentifierURI":"http://rns.nii.ac.jp/nr/1000030203110"}]},{"creatorNames":[{"creatorName":"Arai, Eisuke","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"4387","nameIdentifierScheme":"WEKO"}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2017-01-25"}],"displaytype":"detail","filename":"APL 83_928.pdf","filesize":[{"value":"172.2 kB"}],"format":"application/pdf","license_note":"Copyright (2003) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.The following article appeared in Applied physics letters, 83(5),pp.928-930 ; 2003 and may be found at http://link.aip.org/link/?apl/83/928","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"本文_fulltext","url":"https://nitech.repo.nii.ac.jp/record/5159/files/APL 83_928.pdf"},"version_id":"54c97978-67ec-4699-8216-94f4246f946c"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"item_resource_type","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"Interface recombination velocity of silicon-on-insulator wafers measured by microwave reflectance photoconductivity decay method with electric field","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Interface recombination velocity of silicon-on-insulator wafers measured by microwave reflectance photoconductivity decay method with electric field","subitem_title_language":"en"}]},"item_type_id":"10001","owner":"91","path":["31"],"pubdate":{"attribute_name":"PubDate","attribute_value":"2012-11-06"},"publish_date":"2012-11-06","publish_status":"0","recid":"5159","relation_version_is_last":true,"title":["Interface recombination velocity of silicon-on-insulator wafers measured by microwave reflectance photoconductivity decay method with electric field"],"weko_creator_id":"91","weko_shared_id":-1},"updated":"2025-03-19T05:06:19.485159+00:00"}