{"created":"2023-05-15T12:36:00.646805+00:00","id":5161,"links":{},"metadata":{"_buckets":{"deposit":"0717b3b9-7c8b-47ec-a2fd-184fa281f7da"},"_deposit":{"created_by":91,"id":"5161","owners":[91],"pid":{"revision_id":0,"type":"depid","value":"5161"},"status":"published"},"_oai":{"id":"oai:nitech.repo.nii.ac.jp:00005161","sets":["31"]},"author_link":["8609","3523","8609","3523","17384","17385","17386","17387"],"item_10001_biblio_info_28":{"attribute_name":"bibliographic_information","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2003-09-01","bibliographicIssueDateType":"Issued"},"bibliographicIssueNumber":"5","bibliographicPageEnd":"3238","bibliographicPageStart":"3233","bibliographicVolumeNumber":"94","bibliographic_titles":[{"bibliographic_title":"JOURNAL OF APPLIED PHYSICS","bibliographic_titleLang":"en"}]}]},"item_10001_description_36":{"attribute_name":"内容記述","attribute_value_mlt":[{"subitem_description":"An optical-capacitance-transient spectroscopy (O-CTS) method was used to characterize defects in epitaxial 6H-SiC. The O-CTS measurements enable us to estimate the optical ionization energy and the optical cross section of these defects. By the deep level transient spectroscopy (DLTS), three peaks were observed, and two of them were identified as E2 and R centers which have been previously reported. We measured the optical cross section for both the centers. By fitting the experimental data with theoretical curves for the optical cross section, we obtained optical ionization energy of 1.58 eV for the R center and 1.0 eV for the E2 center. From the DLTS measurements, the thermal activation energy of the R center is 1.30 eV and that of the E2 center is 0.43 eV. From these results and the previously reported capture energy barrier, the Franck?Condon shift, dFC is estimated to be 0.28 eV for the R center and 0.62 eV for the E2 center.","subitem_description_language":"en","subitem_description_type":"Other"}]},"item_10001_full_name_27":{"attribute_name":"著者別名","attribute_value_mlt":[{"nameIdentifiers":[{"nameIdentifier":"8609","nameIdentifierScheme":"WEKO"},{"nameIdentifier":"1000080362317","nameIdentifierScheme":"NRID","nameIdentifierURI":"http://rns.nii.ac.jp/nr/1000080362317"}],"names":[{"name":"加藤, 正史"}]},{"nameIdentifiers":[{"nameIdentifier":"3523","nameIdentifierScheme":"WEKO"},{"nameIdentifier":"1000030203110","nameIdentifierScheme":"NRID","nameIdentifierURI":"http://rns.nii.ac.jp/nr/1000030203110"}],"names":[{"name":"市村, 正也"}]}]},"item_10001_publisher_29":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"American Institute of Physics","subitem_publisher_language":"en"}]},"item_10001_relation_34":{"attribute_name":"item_10001_relation_34","attribute_value_mlt":[{"subitem_relation_name":[{"subitem_relation_name_text":"10.1063/1.1600528"}],"subitem_relation_type":"isIdenticalTo","subitem_relation_type_id":{"subitem_relation_type_id_text":"http://dx.doi.org/10.1063/1.1600528","subitem_relation_type_select":"DOI"}}]},"item_10001_source_id_30":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"0021-8979","subitem_source_identifier_type":"ISSN"}]},"item_10001_source_id_32":{"attribute_name":"item_10001_source_id_32","attribute_value_mlt":[{"subitem_source_identifier":"AA00693547","subitem_source_identifier_type":"NCID"}]},"item_10001_version_type_33":{"attribute_name":"出版タイプ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_970fb48d4fbd8a85","subitem_version_type":"VoR"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Kato, Masashi","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"8609","nameIdentifierScheme":"WEKO"},{"nameIdentifier":"1000080362317","nameIdentifierScheme":"NRID","nameIdentifierURI":"http://rns.nii.ac.jp/nr/1000080362317"}]},{"creatorNames":[{"creatorName":"Ichimura, Masaya","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"3523","nameIdentifierScheme":"WEKO"},{"nameIdentifier":"1000030203110","nameIdentifierScheme":"NRID","nameIdentifierURI":"http://rns.nii.ac.jp/nr/1000030203110"}]},{"creatorNames":[{"creatorName":"Nakakura, Y.","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"17384","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Arai, E.","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"17385","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Tokuda, Y.","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"17386","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Nishino, S.","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"17387","nameIdentifierScheme":"WEKO"}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2017-01-25"}],"displaytype":"detail","filename":"JAP 94_3233.pdf","filesize":[{"value":"97.5 kB"}],"format":"application/pdf","license_note":"Copyright (2003) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.The following article appeared in Journal of Applied Physics, 94(5), pp.3233- 3238 ; 2003 and may be found at http://link.aip.org/link/?jap/94/3233","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"本文_fulltext","url":"https://nitech.repo.nii.ac.jp/record/5161/files/JAP 94_3233.pdf"},"version_id":"4b878f05-16ca-4b0d-a83b-67b7d84bfb7c"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"item_resource_type","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"Characterization  of deep levels in 6H-SiC by optical-capacitance-transient spectroscopy","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Characterization  of deep levels in 6H-SiC by optical-capacitance-transient spectroscopy","subitem_title_language":"en"}]},"item_type_id":"10001","owner":"91","path":["31"],"pubdate":{"attribute_name":"PubDate","attribute_value":"2012-11-06"},"publish_date":"2012-11-06","publish_status":"0","recid":"5161","relation_version_is_last":true,"title":["Characterization  of deep levels in 6H-SiC by optical-capacitance-transient spectroscopy"],"weko_creator_id":"91","weko_shared_id":-1},"updated":"2025-03-19T05:07:34.995132+00:00"}