Characterization  of deep levels in 6H-SiC by optical-capacitance-transient spectroscopy

JAP 94_3233

WEKO3

lat lon distance

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JAP 94_3233.pdf

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JAP 94_3233.pdf (97.5 kB) sha256 670f1ec017fa698905302bd998f94f17b8960ca28220d8a9a9a87150fd991ead	Copyright (2003) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.The following article appeared in Journal of Applied Physics, 94(5), pp.3233- 3238 ; 2003 and may be found at http://link.aip.org/link/?jap/94/3233

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