@article{oai:nitech.repo.nii.ac.jp:00005171,
 author = {Nakano, Yoshitaka and Kachi, Tetsu and Jimbo, Takashi},
 issue = {21},
 journal = {APPLIED PHYSICS LETTERS},
 month = {Nov},
 note = {We report on the characteristics of SiO2/n-GaN metal-oxide-semiconductor (MOS) structures with β-Ga2O3 interlayers. β-Ga2O3 15 nm thick was grown by dry oxidation at 800°C for 6 h, and 100-nm-thick SiO2 was then deposited by sputtering. Capacitance-voltage measurements show a low interface trap density of ?3.9×1010eV-1cm-2, probably indicating an unpinning of the surface Fermi level. Additionally, current-voltage measurements display a low leakage current of ?1.2 μA/cm2 at a gate voltage of +20 V, regardless of rough oxide surface, as confirmed by atomic force microscopy observations. Thus, the stacked SiO2/β-Ga2O3 insulator is found to improve both the electrical interface properties and the gate dielectric characteristics of the GaN MOS structures., application/pdf},
 pages = {4336--4338},
 title = {Characteristics of SiO2/n-GaN interfaces with β-Ga2O3 interlayers},
 volume = {83},
 year = {2003}
}