@article{oai:nitech.repo.nii.ac.jp:00005220,
 author = {Miyake, K. and Shigeto, K. and Yokoyama, Y. and Ono, T. and Mibu, Ko and Shinjo, T.},
 issue = {1},
 journal = {JOURNAL OF APPLIED PHYSICS},
 month = {Dec},
 note = {We fabricated nanocontact structures (typically in a range from 15×13 nm2 to 20×40 nm2) between Ni81Fe19 wires using electron-beam lithography and a lift-off process. In the magnetization reversal process for each sample, two kinds of magnetic domain walls with different magnetic configurations were trapped at the nanocontact between the two wires. The directions of the magnetization in the nanocontact were different between the two domain walls. These walls yielded different values of electric resistance and different depinning fields. The magnetization of the nanocontact suppresses or assists the magnetization rotation in the connected magnetic element through exchange interaction (exchange biasing), which causes the differences in the depinning field and dominates the magnetization process of the magnetic element., application/pdf},
 pages = {014309-1--014309-6},
 title = {Exchange biasing of a Neel wall in the nanocontact between NiFe wires},
 volume = {97},
 year = {2004}
}