{"created":"2023-05-15T12:36:06.549808+00:00","id":5298,"links":{},"metadata":{"_buckets":{"deposit":"0243aebb-15b6-4ff4-8ab8-5c5f46643243"},"_deposit":{"created_by":91,"id":"5298","owners":[91],"pid":{"revision_id":0,"type":"depid","value":"5298"},"status":"published"},"_oai":{"id":"oai:nitech.repo.nii.ac.jp:00005298","sets":["31"]},"author_link":["8610","18210","18205","17532","17533","8610","18209","18210"],"item_10001_biblio_info_28":{"attribute_name":"bibliographic_information","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2006-06-22","bibliographicIssueDateType":"Issued"},"bibliographicIssueNumber":"25","bibliographicPageEnd":"251116-3","bibliographicPageStart":"251116-1","bibliographicVolumeNumber":"88","bibliographic_titles":[{"bibliographic_title":"APPLIED PHYSICS LETTERS","bibliographic_titleLang":"en"}]}]},"item_10001_description_36":{"attribute_name":"内容記述","attribute_value_mlt":[{"subitem_description":"N-doped and In-N-codoped ZnO films were fabricated on quartz glass substrate by sol-gel spin coating. Their p-type conductivities were characterized by the Hall measurements, revealing low resistivities of the order of 10-1 Ω cm. Thin-film junctions comprising an undoped ZnO layer and a N-doped ZnO layer displayed the typical rectifying characteristics, suggesting formation of p-n homojunctions at the interfaces.","subitem_description_language":"en","subitem_description_type":"Other"}]},"item_10001_full_name_27":{"attribute_name":"著者別名","attribute_value_mlt":[{"nameIdentifiers":[{"nameIdentifier":"8610","nameIdentifierScheme":"WEKO"},{"nameIdentifier":"1000030236715","nameIdentifierScheme":"NRID","nameIdentifierURI":"http://rns.nii.ac.jp/nr/1000030236715"}],"names":[{"name":"種村, 眞幸"}]},{"nameIdentifiers":[{"nameIdentifier":"18210","nameIdentifierScheme":"WEKO"}],"names":[{"name":"林, 靖彦"}]}]},"item_10001_publisher_29":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"American Institute of Physics","subitem_publisher_language":"en"}]},"item_10001_relation_34":{"attribute_name":"item_10001_relation_34","attribute_value_mlt":[{"subitem_relation_name":[{"subitem_relation_name_text":"10.1063/1.2215618"}],"subitem_relation_type":"isIdenticalTo","subitem_relation_type_id":{"subitem_relation_type_id_text":"http://dx.doi.org/10.1063/1.2215618","subitem_relation_type_select":"DOI"}}]},"item_10001_source_id_30":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"0003-6951","subitem_source_identifier_type":"ISSN"}]},"item_10001_source_id_32":{"attribute_name":"item_10001_source_id_32","attribute_value_mlt":[{"subitem_source_identifier":"AA00543432","subitem_source_identifier_type":"NCID"}]},"item_10001_version_type_33":{"attribute_name":"出版タイプ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_970fb48d4fbd8a85","subitem_version_type":"VoR"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Cao, Yongge","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"18205","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Miao, Lei","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"17532","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Tanemura, Sakae","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"17533","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Tanemura, Masaki","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"8610","nameIdentifierScheme":"WEKO"},{"nameIdentifier":"1000030236715","nameIdentifierScheme":"NRID","nameIdentifierURI":"http://rns.nii.ac.jp/nr/1000030236715"}]},{"creatorNames":[{"creatorName":"Kuno, Yohei","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"18209","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Hayashi, Yasuhiko","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"18210","nameIdentifierScheme":"WEKO"}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2017-01-25"}],"displaytype":"detail","filename":"APL 88_251116-1.pdf","filesize":[{"value":"166.2 kB"}],"format":"application/pdf","license_note":"Copyright (2006) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.The following article appeared in Applied physics letters, 88(25),pp.251116-1 - 251116-3; 2006 and may be found at http://link.aip.org/link/?apl/88/251116","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"本文_fulltext","url":"https://nitech.repo.nii.ac.jp/record/5298/files/APL 88_251116-1.pdf"},"version_id":"9019e46d-97ba-47b9-a485-70c25011bacd"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"item_resource_type","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"Low resistivity p-ZnO films fabricated by sol-gel spin coating","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Low resistivity p-ZnO films fabricated by sol-gel spin coating","subitem_title_language":"en"}]},"item_type_id":"10001","owner":"91","path":["31"],"pubdate":{"attribute_name":"PubDate","attribute_value":"2012-11-06"},"publish_date":"2012-11-06","publish_status":"0","recid":"5298","relation_version_is_last":true,"title":["Low resistivity p-ZnO films fabricated by sol-gel spin coating"],"weko_creator_id":"91","weko_shared_id":-1},"updated":"2025-03-19T07:02:22.270914+00:00"}