@article{oai:nitech.repo.nii.ac.jp:00005304,
 author = {Ozaki, Nobuhiko and Nishizawa, Nozomi and Marcet, Stephane and Kuroda, Shinji and Eryu, Osamu and Takita, Koki},
 issue = {3},
 journal = {PHYSICAL REVIEW LETTERS},
 month = {Jul},
 note = {The effect of additional doping of charge impurities was investigated in a ferromagnetic semiconductor Zn1 xCrxTe. It was found that the doping of iodine, which is expected to act as an n-type dopant in ZnTe, brought about a drastic enhancement of the ferromagnetism in Zn1 xCrxTe, while the grown films remained electrically insulating. In particular, at a fixed Cr composition of x   0:05, the ferromagnetic transition temperature TC increased up to 300 K at maximum due to the iodine doping from TC   30 K of the undoped counterpart, while the ferromagnetism disappeared due to the doping of nitrogen as a p-type dopant. The observed systematic correlation of ferromagnetism with the doping of charge impurities of both the p and n type, suggesting a key role of the position of Fermi level within the impurity d state, is discussed on the basis of the double-exchange interaction as a mechanism of ferromagnetism in this material., application/pdf},
 pages = {037201-1--037201-4},
 title = {Significant Enhancement of Ferromagnetism in Zn1 xCrxTe Doped with Iodine as an n-Type Dopant},
 volume = {97},
 year = {2006}
}