{"created":"2023-05-15T12:36:07.089850+00:00","id":5311,"links":{},"metadata":{"_buckets":{"deposit":"f867a926-4f05-4894-9796-7026ea22723d"},"_deposit":{"created_by":3,"id":"5311","owners":[3],"pid":{"revision_id":0,"type":"depid","value":"5311"},"status":"published"},"_oai":{"id":"oai:nitech.repo.nii.ac.jp:00005311","sets":["31"]},"author_link":["8609","18293","18296","18297","3523","17385","18298"],"item_10001_biblio_info_28":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2006-09-13","bibliographicIssueDateType":"Issued"},"bibliographicIssueNumber":"5","bibliographicPageEnd":"053708-8","bibliographicPageStart":"053708-1","bibliographicVolumeNumber":"100","bibliographic_titles":[{"bibliographic_title":"JOURNAL OF APPLIED PHYSICS"}]}]},"item_10001_description_36":{"attribute_name":"内容記述","attribute_value_mlt":[{"subitem_description":"We have characterized deep levels in 4H-SiC epilayers grown by cold wall chemical vapor deposition by the deep level transient spectroscopy (DLTS) and the optical-capacitance-transient spectroscopy (O-CTS). Four kinds of DLTS peaks were detected in the epilayers. Three of them are identified as the Z1/2, EH6/7, and RD1/2 centers, while the other one has never been reported previously, and was named the NB center. On the basis of these DLTS data we have estimated the thermal ionization energies. The classical optical ionization energies of these centers, which are given by the sums of thermal ionization energies and Franck-Condon shifts, were estimated via fittings of the measured optical cross sections from O-CTS data by means of a sufficiently general theoretical model. Temperature dependences of nonradiative multiphonon carrier capture cross sections for the Z1/2 and NB centers were roughly estimated in terms of parametrical dependences on thermal ionization energies and Franck-Condon shifts.","subitem_description_type":"Other"}]},"item_10001_description_38":{"attribute_name":"フォーマット","attribute_value_mlt":[{"subitem_description":"application/pdf","subitem_description_type":"Other"}]},"item_10001_full_name_27":{"attribute_name":"著者別名","attribute_value_mlt":[{"nameIdentifiers":[{},{}],"names":[{"name":"加藤, 正史"}]},{"nameIdentifiers":[{},{}],"names":[{"name":"市村, 正也"}]}]},"item_10001_publisher_29":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"American Institute of Physics"}]},"item_10001_relation_34":{"attribute_name":"DOI","attribute_value_mlt":[{"subitem_relation_name":[{"subitem_relation_name_text":"10.1063/1.2344809"}],"subitem_relation_type":"isIdenticalTo","subitem_relation_type_id":{"subitem_relation_type_id_text":"http://dx.doi.org/10.1063/1.2344809","subitem_relation_type_select":"DOI"}}]},"item_10001_source_id_30":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"00218979","subitem_source_identifier_type":"ISSN"}]},"item_10001_source_id_32":{"attribute_name":"書誌レコードID（NCID）","attribute_value_mlt":[{"subitem_source_identifier":"AA00693547","subitem_source_identifier_type":"NCID"}]},"item_10001_version_type_33":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_970fb48d4fbd8a85","subitem_version_type":"VoR"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Kato, Masashi","creatorNameLang":"en"}],"nameIdentifiers":[{},{}]},{"creatorNames":[{"creatorName":"Tanaka, S.","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Ichimura, Masaya","creatorNameLang":"en"}],"nameIdentifiers":[{},{}]},{"creatorNames":[{"creatorName":"Arai, E.","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Nakamura, S.","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Kimoto, T.","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Passler, R.","creatorNameLang":"en"}],"nameIdentifiers":[{}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2017-01-25"}],"displaytype":"detail","filename":"JAP 100_053708-1.pdf","filesize":[{"value":"137.4 kB"}],"format":"application/pdf","license_note":"Copyright (2006) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.The following article appeared in Journal of Applied Physics, 100(5), pp.053708-1- 053708-3 ; 2006 and may be found at http://link.aip.org/link/?jap/100/053708","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"本文_fulltext","url":"https://nitech.repo.nii.ac.jp/record/5311/files/JAP 100_053708-1.pdf"},"version_id":"fc176d98-e318-44a8-9b22-34ed00c69a51"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"Optical cross sections of deep levels in 4H-SiC","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Optical cross sections of deep levels in 4H-SiC","subitem_title_language":"en"}]},"item_type_id":"10001","owner":"3","path":["31"],"pubdate":{"attribute_name":"公開日","attribute_value":"2012-11-06"},"publish_date":"2012-11-06","publish_status":"0","recid":"5311","relation_version_is_last":true,"title":["Optical cross sections of deep levels in 4H-SiC"],"weko_creator_id":"3","weko_shared_id":3},"updated":"2023-05-15T14:27:53.091589+00:00"}