{"created":"2023-05-15T12:36:09.462502+00:00","id":5367,"links":{},"metadata":{"_buckets":{"deposit":"0e0e1851-ade4-4ae1-98a2-a74a0c388857"},"_deposit":{"created_by":91,"id":"5367","owners":[91],"pid":{"revision_id":0,"type":"depid","value":"5367"},"status":"published"},"_oai":{"id":"oai:nitech.repo.nii.ac.jp:00005367","sets":["31"]},"author_link":["8609","8609","18599","18600","4387"],"item_10001_biblio_info_28":{"attribute_name":"bibliographic_information","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2008-01-01","bibliographicIssueDateType":"Issued"},"bibliographicIssueNumber":"1","bibliographicPageEnd":"121","bibliographicPageStart":"120","bibliographicVolumeNumber":"E91-C","bibliographic_titles":[{"bibliographic_title":"IEICE transactions on information and systems","bibliographic_titleLang":"en"}]}]},"item_10001_description_36":{"attribute_name":"内容記述","attribute_value_mlt":[{"subitem_description":"This letter presents a low-power switched current (SI) memory cell with CMOS-type configuration. By combining nMOS and pMOS in the SI memory cell and using a polarity discrimination circuit, we design a CMOS-type SI memory cell which eliminates the quiescent current in the SI memory cell. The simulation result shows that the CMOS-type SI memory cell consumes less power than the conventional class-AB memory cell.","subitem_description_language":"en","subitem_description_type":"Other"}]},"item_10001_full_name_27":{"attribute_name":"著者別名","attribute_value_mlt":[{"nameIdentifiers":[{"nameIdentifier":"8609","nameIdentifierScheme":"WEKO"},{"nameIdentifier":"1000080362317","nameIdentifierScheme":"NRID","nameIdentifierURI":"http://rns.nii.ac.jp/nr/1000080362317"}],"names":[{"name":"加藤, 正史"}]}]},"item_10001_publisher_29":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"Institute of Electronics, Information and Communication Engineers","subitem_publisher_language":"en"}]},"item_10001_source_id_30":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"0916-8524","subitem_source_identifier_type":"ISSN"}]},"item_10001_source_id_32":{"attribute_name":"item_10001_source_id_32","attribute_value_mlt":[{"subitem_source_identifier":"AA10826283","subitem_source_identifier_type":"NCID"}]},"item_10001_version_type_33":{"attribute_name":"出版タイプ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_970fb48d4fbd8a85","subitem_version_type":"VoR"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Kato, Masashi","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"8609","nameIdentifierScheme":"WEKO"},{"nameIdentifier":"1000080362317","nameIdentifierScheme":"NRID","nameIdentifierURI":"http://rns.nii.ac.jp/nr/1000080362317"}]},{"creatorNames":[{"creatorName":"Terada, Nobuyuki","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"18599","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Ohata, Hirofumi","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"18600","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Arai, Eisuke","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"4387","nameIdentifierScheme":"WEKO"}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2017-01-25"}],"displaytype":"detail","filename":"E91-C_120.pdf","filesize":[{"value":"107.3 kB"}],"format":"application/pdf","license_note":"Copyright(c)2008 IEICE　http://search.ieice.org/index.html","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"本文_fulltext","url":"https://nitech.repo.nii.ac.jp/record/5367/files/E91-C_120.pdf"},"version_id":"4dcfcea2-53a2-4156-932e-d364658ac881"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"item_resource_type","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"Low-Power Switched Current Memory Cell with CMOS-Type Configuration","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Low-Power Switched Current Memory Cell with CMOS-Type Configuration","subitem_title_language":"en"}]},"item_type_id":"10001","owner":"91","path":["31"],"pubdate":{"attribute_name":"PubDate","attribute_value":"2012-11-06"},"publish_date":"2012-11-06","publish_status":"0","recid":"5367","relation_version_is_last":true,"title":["Low-Power Switched Current Memory Cell with CMOS-Type Configuration"],"weko_creator_id":"91","weko_shared_id":-1},"updated":"2025-03-21T02:10:26.409236+00:00"}