@article{oai:nitech.repo.nii.ac.jp:00005387,
 author = {Kato, Masashi and Mikamo, K. and Ichimura, Masaya and Kanechika, M. and Ishiguro, O. and Kachi, T.},
 issue = {9},
 journal = {JOURNAL OF APPLIED PHYSICS},
 month = {May},
 note = {The plasma etching damage in p-type GaN has been characterized. From current-voltage and capacitance-voltage characteristics of Schottky diodes, it was revealed that inductively coupled plasma (ICP) etching causes an increase in series resistance of the Schottky diodes and compensation of acceptors in p-type GaN. We investigated deep levels near the valence band of p-type GaN using current deep level transient spectroscopy (DLTS), and no deep level originating from the ICP etching damage was observed. On the other hand, by capacitance DLTS measurements for n-type GaN, we observed an increase in concentration of a donor-type defect with an activation energy of 0.25?eV after the ICP etching. The origin of this defect would be due to nitrogen vacancies. We also observed this defect by photocapacitance measurements for ICP-etched p-type GaN. For both n- and p-type GaN, we found that the low bias power ICP etching is effective to reduce the concentration of this defect introduced by the high bias power ICP etching., application/pdf},
 pages = {093701-1--093701-5},
 title = {Characterization  of plasma etching damage on p -type GaN using Schottky diodes},
 volume = {103},
 year = {2008}
}