@article{oai:nitech.repo.nii.ac.jp:00005411,
 author = {Yokota, Takeshi and Murata, Shotaro and Kuribayashi, Takaaki and Gomi, Manabu},
 issue = {1359},
 journal = {Journal of the Ceramic Society of Japan},
 month = {Nov},
 note = {We investigated the magnetic and dielectric properties of a metal (Pt)/insulator (Cr_2O_3)/magnetic floating gate (Fe)/tunnel layer (CeO_2)/semiconductor (Si) capacitor. This capacitor shows capacitance-voltage (C-V) properties typical of a Si Metal-Insulator-Semiconductor (MIS) capacitor with hysteresis, which indicates that electrons have been injected into the Fe layer. The capacitor also shows ferromagnetic properties. The C-V curve has a hysteresis window with a clockwise trace. This hysteresis behavior was changed by the application of an external magnetic field. These results indicate that this MIS capacitor contains a ferromagnetic floating gate and a magneto-electric insulating layer in a single system., application/pdf},
 pages = {1204--1207},
 title = {Magnetic and magneto-dielectric properties of magneto-electric field effect capacitor using Cr2O3},
 volume = {116},
 year = {2008}
}